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TMS27C64-1JL

Texas Instruments

TMS27C64-1JL by Texas Instruments

TMS27C64-1JL by Texas Instruments is an 8KX8 EPROM with 70°C max temp, 150 ns access time, and 5V supply. Ideal for commercial applications requiring a CMOS technology UVPROM memory IC with 65536-bit density and parallel operation.

Median Price

$5.380

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 90 parts In-Stock

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$5.380

100+ parts

$4.040

1k+ parts

$3.500

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90

$5.380

$4.040

$3.500

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Vyrian

USA . 6,109 parts In-Stock

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Digiode

USA . 459 parts In-Stock

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459

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Bristol Electronics

USA . 293 parts In-Stock

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Atlantic Semiconductor

USA . 278 parts In-Stock

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Elcom Components

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90

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Electronics Depot

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80

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MRC Electronics

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Q Components

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Contempo Components LLC

USA . 26 parts In-Stock

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Electronic Expediters

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Quantum Digital Technology

USA . 12 parts In-Stock

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Prism Electronics

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Semi Source

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J & M Industries LLC

USA . 5 parts In-Stock

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Sunrise Surplus Inc.

USA . 5 parts In-Stock

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Standard Data Resources

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ECAB

Sweden . 1 parts In-Stock

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Parana Technologies

USA . 2,245 parts In-Stock

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$4.180

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$4.622

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$4.180

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$4.622

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ChromeModa Solutions

Germany . 2,482 parts In-Stock

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$4.697

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$3.852

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2,482

$4.697

$3.852

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IDEA Electronic Components Group

UK . 206 parts In-Stock

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$4.697

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$4.227

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$4.697

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One Stop Electronics

USA . 1,392 parts In-Stock

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$5.000

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AZTECH Wire

Italy . 682 parts In-Stock

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$16.586

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Corphita

USA . 4,300 parts In-Stock

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DigiPath Technology Company

USA . 1,326 parts In-Stock

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Perfect Parts

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Amble Industries

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Assy Fe

Spain . 1 parts In-Stock

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Overview

Unlock the power of reliable and high-quality memory storage with the TMS27C64-1JL by Texas Instruments. As a leader in the industry, Texas Instruments delivers top-notch EPROM technology that caters to a wide range of applications. With its advanced features and seamless operation, this product offers customers unmatched value, efficiency, and performance. Experience the benefits of superior memory solutions with the TMS27C64-1JL and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and protection for the EPROM, ensuring longevity and reliable performance.

Operating Mode: ASYNCHRONOUS

Allows for independent operation without requiring synchronization, enhancing flexibility in usage.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage compatibility for easy integration into existing systems.

Organization: 8KX8

Offers a good balance of storage capacity and access speed for a variety of applications.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making the EPROM energy-efficient and reliable.

Maximum Access Time: 150 ns

Fast access time ensures quick retrieval of data, making this EPROM suitable for time-sensitive operations.

Technical Specifications

EPROM TMS27C64-1JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

12.5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C64-1JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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