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TMS27C512-30JL

Texas Instruments

TMS27C512-30JL by Texas Instruments

TMS27C512-30JL by Texas Instruments is a 64KX8 EPROM with 300 ns access time, operating at 5V. It features 3-STATE output characteristics and uses CMOS technology. Commonly used in commercial applications for parallel data storage due to its 524288 bit memory density.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,714 parts In-Stock

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8,714

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Digiode

USA . 1,052 parts In-Stock

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1,052

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Q Components

USA . 2 parts In-Stock

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2

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Distributors (Availability)

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Parana Technologies

USA . 2,054 parts In-Stock

1+ parts

$3.694

100+ parts

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1k+ parts

$4.196

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2,054

$3.694

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$4.196

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DigiPath Technology Company

USA . 1,618 parts In-Stock

1+ parts

$4.068

100+ parts

$3.743

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1,618

$4.068

$3.743

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ChromeModa Solutions

Germany . 5,070 parts In-Stock

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$4.151

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$3.404

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5,070

$4.151

$3.404

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IDEA Electronic Components Group

UK . 2,173 parts In-Stock

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$4.151

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$3.736

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2,173

$4.151

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$3.736

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One Stop Electronics

USA . 958 parts In-Stock

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$9.000

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958

$9.000

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AZTECH Wire

Italy . 242 parts In-Stock

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$15.065

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Corphita

USA . 2,640 parts In-Stock

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Overview

Experience top-of-the-line quality with the TMS27C512-30JL EPROM by Texas Instruments. Known for their superior manufacturing standards, Texas Instruments delivers high-performance memory solutions for a wide range of applications. This EPROM offers reliability, efficiency, and versatility, making it an ideal choice for your electronic projects. Trust in Texas Instruments to provide you with cutting-edge technology that meets your needs and exceeds your expectations. Unlock the potential of your designs with the TMS27C512-30JL EPROM today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides excellent durability and protection for the EPROM, ensuring reliable performance in harsh environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent control of read and write operations, making the EPROM suitable for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard electronic systems and power sources, making integration of the EPROM straightforward.

No. of Words: 65536 words

With a large memory capacity of 65536 words, the EPROM is capable of storing a significant amount of data, making it ideal for applications requiring extensive memory storage.

Technology: CMOS

Utilizing CMOS technology, the EPROM offers low power consumption and high speed performance, making it energy efficient and responsive in operation.

Maximum Access Time: 300 ns

The fast maximum access time of 300 ns ensures quick read and write operations, enhancing the overall performance and efficiency of the EPROM.

Technical Specifications

EPROM TMS27C512-30JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

300 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C512-30JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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