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TMS27C040-10JL

Texas Instruments

TMS27C040-10JL by Texas Instruments

TMS27C040-10JL by Texas Instruments is a 512KX8 EPROM with 100ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and IN-LINE package style. Ideal for applications requiring fast memory access in commercial temperature environments.

Median Price

$7.245

Lifecycle Status

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28

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American Microsemiconductor Inc.

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Component Electronics Inc.

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Vyrian

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J & M Industries LLC

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Corel Iberica Componentes, S.L.

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Prism Electronics

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Semi Source

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Connector Distribution Corp

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Right Parts Inc.

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Electronic Expediters

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Electronics Depot

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Mentor Electronics Marketing, LLC

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GES GmbH

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ECAB

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Manoshevitz Elec. Sales

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Mil-Aero Solutions, Inc.

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ComSIT Distribution GmbH

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ComSIT USA

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PC Components Company LLC

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Bristol Electronics

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First Choice Components Inc.

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EMSNET

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Parana Technologies

USA . 2,066 parts In-Stock

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$4.024

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$4.486

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DigiPath Technology Company

USA . 1,212 parts In-Stock

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IDEA Electronic Components Group

UK . 1,628 parts In-Stock

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ChromeModa Solutions

Germany . 881 parts In-Stock

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AZTECH Wire

Italy . 318 parts In-Stock

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One Stop Electronics

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A-Z Elektronik GmbH

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Corphita

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Assy Fe

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Computer Components Inc. - USA

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Overview

Unlock endless possibilities with the TMS27C040-10JL EPROM by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge technology in a compact, durable package. Ideal for a wide range of applications, this EPROM offers fast access times, low power consumption, and high memory density. Experience seamless performance and unparalleled value with the TMS27C040-10JL, the perfect solution for your memory storage needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the EPROM, making it suitable for harsh environmental conditions.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard 5V power supplies, ensuring easy integration into existing systems.

Output Characteristics: 3-STATE

Allows for multiple EPROM devices to be connected to a common bus without conflicts, enhancing flexibility in circuit design.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, making it energy efficient and reliable.

Memory Density: 4194304 bit

Offers a high memory density, allowing for storage of large amounts of data in a compact space.

Technical Specifications

EPROM TMS27C040-10JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Length:

41.91 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C040-10JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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