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TMS27C210-30JL

Texas Instruments

TMS27C210-30JL by Texas Instruments

TMS27C210-30JL by Texas Instruments is a 64KX16 EPROM with 300 ns access time, 5V supply voltage, and 40 mA supply current. It is used in commercial applications for storing data in parallel format with 3-STATE output characteristics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,368 parts In-Stock

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2,368

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Vyrian

USA . 2,087 parts In-Stock

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2,087

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Distributors (Availability)

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One Stop Electronics

USA . 865 parts In-Stock

1+ parts

$2.000

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865

$2.000

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Parana Technologies

USA . 62 parts In-Stock

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$2.689

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$3.173

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62

$2.689

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$3.173

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DigiPath Technology Company

USA . 155 parts In-Stock

1+ parts

$2.961

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$2.724

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155

$2.961

$2.724

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ChromeModa Solutions

Germany . 6,321 parts In-Stock

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$3.021

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$2.477

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6,321

$3.021

$2.477

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IDEA Electronic Components Group

UK . 1,686 parts In-Stock

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$3.021

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$2.719

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1,686

$3.021

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$2.719

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AZTECH Wire

Italy . 598 parts In-Stock

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$9.877

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Corphita

USA . 2,096 parts In-Stock

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Overview

Discover the cutting-edge TMS27C210-30JL EPROM by Texas Instruments, a state-of-the-art memory IC offering unparalleled quality and reliability. Perfect for a wide range of applications, this innovative product boasts a sleek rectangular package body made of ceramic and metal-sealed cofired materials. With a nominal supply voltage of 5V and maximum operating temperature of 70°C, the TMS27C210-30JL provides customers with superior performance and efficiency. Experience the benefits of Texas Instruments' advanced technology and elevate your projects to new heights with this exceptional EPROM solution.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides excellent durability and protection for the internal components, ensuring a longer product lifespan.

Nominal Supply Voltage/ Vsup (V): 5

Stable supply voltage of 5V ensures reliable performance of the EPROM.

No. of Terminals: 40

Sufficient number of terminals for connectivity and integration with other components.

Organization: 64KX16

Organized in a 64K x 16 configuration, allowing for efficient data storage and retrieval.

Output Characteristics: 3-STATE

3-STATE output allows for multiple devices to share the same output line without interference, enhancing versatility and flexibility.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the EPROM energy-efficient and reliable.

No. of Words: 65536 words

Large capacity of 65536 words for storing data, suitable for diverse applications.

Memory IC Type: UVPROM

UVPROM technology offers non-volatile memory storage with the added benefit of being erasable and reprogrammable.

Maximum Access Time: 300 ns

Fast access time of 300 ns ensures quick retrieval of data, enhancing overall performance.

Technical Specifications

EPROM TMS27C210-30JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

300 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T40

Length:

52.07 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

40

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP40,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C210-30JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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