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27C256-10I/P

Microchip Technology

27C256-10I/P by Microchip Technology

27C256-10I/P by Microchip Technology is a 32KX8 EPROM with 262144 bit memory density. It operates at 5V, has 100 ns access time, and features 3-STATE output characteristics. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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870

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VNN

France . 126 parts In-Stock

1+ parts

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126

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 74 parts In-Stock

1+ parts

$2.365

100+ parts

-

1k+ parts

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10k+ parts

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74

$2.365

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Ampacity Inc.

Singapore . 1,573 parts In-Stock

1+ parts

$10.000

100+ parts

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1k+ parts

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1,573

$10.000

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Marpe Global Electronics

Taiwan . 5,205 parts In-Stock

1+ parts

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5,205

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XL Components Corporation

Australia . 3,604 parts In-Stock

1+ parts

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3,604

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Continental Prestige Electronics

USA . 3,118 parts In-Stock

1+ parts

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3,118

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Argo Parts USA

USA . 3,092 parts In-Stock

1+ parts

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3,092

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QualityLine Systems

Poland . 1,682 parts In-Stock

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1,682

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Netroflash

USA . 1,000 parts In-Stock

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1,000

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Overview

Unlock a world of possibilities with the 27C256-10I/P by Microchip Technology. As a leading manufacturer in the industry, Microchip Technology delivers top-quality EPROMs that are perfect for a wide range of applications. With its robust design and reliable performance, this EPROM offers customers unmatched value and benefits. Whether you're looking to store critical data or run essential programs, the 27C256-10I/P is the ideal solution for all your memory needs. Experience the difference with Microchip Technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable material for packaging, ensuring the EPROM chip is protected from external elements.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage supply requirement makes it compatible with most systems, ensuring easy integration.

Operating Mode: ASYNCHRONOUS

Allows for independent functioning without being synchronized with a clock signal, providing more flexibility in usage.

Organization: 32KX8

Optimal organization of memory cells, providing efficient storage and retrieval of data.

Maximum Operating Temperature: 85 °C

High maximum operating temperature range ensures reliable performance even in harsh environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the overall efficiency of the EPROM.

Memory Density: 262144 bit

High memory density allows for storing large amounts of data in a compact chip, making it suitable for various applications.

Technical Specifications

EPROM 27C256-10I/P attributes and parameters. Explore more EPROM devices from Microchip Technology

Specs

Maximum Access Time:

100 ns

Additional Features:

DATA RETENTION >200 YEARS

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T28

JESD-609 Code:

e0

Length:

36.32 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.83 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

OTP ROMs

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

27C256-10I/P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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