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TMS27C128-25JE4

Texas Instruments

TMS27C128-25JE4 by Texas Instruments

TMS27C128-25JE4 by Texas Instruments is a 16KX8 EPROM with 250ns access time, 5V supply voltage, and 3-STATE output. Commonly used in industrial applications for memory storage due to its 131072-bit density and CMOS technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,645 parts In-Stock

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7,645

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Digiode

USA . 670 parts In-Stock

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670

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Distributors (Availability)

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Parana Technologies

USA . 1,138 parts In-Stock

1+ parts

$4.162

100+ parts

-

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$4.606

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1,138

$4.162

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$4.606

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DigiPath Technology Company

USA . 1,093 parts In-Stock

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$4.582

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1,093

$4.582

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ChromeModa Solutions

Germany . 3,898 parts In-Stock

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$4.676

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$3.834

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3,898

$4.676

$3.834

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IDEA Electronic Components Group

UK . 2,099 parts In-Stock

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$4.676

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$4.208

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2,099

$4.676

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One Stop Electronics

USA . 514 parts In-Stock

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$8.000

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514

$8.000

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AZTECH Wire

Italy . 525 parts In-Stock

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$19.408

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525

$19.408

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Corphita

USA . 203 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TMS27C128-25JE4 by Texas Instruments. Crafted with precision using high-quality materials, this EPROM delivers seamless performance in a variety of applications. From industrial automation to consumer electronics, this versatile component ensures optimal functionality and durability. Experience the value of Texas Instruments' expertise and innovation with this cutting-edge product, offering customers unmatched benefits and advantages. Elevate your projects with the TMS27C128-25JE4 and unleash the potential of next-level technology.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material ensures durability and longevity of the EPROM, making it a reliable choice for long-term use.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making it easy to integrate into existing systems.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent and flexible data access, increasing the versatility and efficiency of the EPROM.

Memory Density: 131072 bit

With a high memory density of 131072 bits, this EPROM can store a large amount of data in a compact form, making it suitable for applications that require extensive memory storage.

Maximum Access Time: 250 ns

The fast maximum access time of 250 ns ensures quick data retrieval, improving the overall performance and responsiveness of the EPROM in demanding tasks.

Technical Specifications

EPROM TMS27C128-25JE4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Length:

36.83 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C128-25JE4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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