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TMS2732A-30JL

Texas Instruments

TMS2732A-30JL by Texas Instruments

TMS2732A-30JL by Texas Instruments is a 4KX8 EPROM with 32768 bit memory density. It operates at 5V, has a programming voltage of 21V, and features a max access time of 300ns. Commonly used in commercial applications requiring fast memory access and reliable data storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,169 parts In-Stock

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Digiode

USA . 625 parts In-Stock

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625

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J & M Industries LLC

USA . 178 parts In-Stock

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Q Components

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Semi Source

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Prism Electronics

USA . 21 parts In-Stock

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Electronic Expediters

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Inland Empire Components Inc.

USA . 15 parts In-Stock

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Manotoh

Italy . 10 parts In-Stock

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ComSIT Distribution GmbH

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PC Components Company LLC

USA . 8 parts In-Stock

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Bristol Electronics

USA . 8 parts In-Stock

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Goldney Electronics S.L.

Spain . 4 parts In-Stock

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Pegasus Components GmbH

Germany . 4 parts In-Stock

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MRC Electronics

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LWI Electronics Inc

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Resion

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Distributors (Availability)

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Parana Technologies

USA . 1,448 parts In-Stock

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$4.308

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$4.731

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DigiPath Technology Company

USA . 2,106 parts In-Stock

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$4.743

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$4.743

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IDEA Electronic Components Group

UK . 2,339 parts In-Stock

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$4.840

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$4.356

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ChromeModa Solutions

Germany . 2,084 parts In-Stock

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$4.840

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$3.969

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AZTECH Wire

Italy . 208 parts In-Stock

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$17.901

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One Stop Electronics

USA . 535 parts In-Stock

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Corphita

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Perfect Parts

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Overview

Unlock endless possibilities with the TMS2732A-30JL EPROM from Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge technology that meets the highest industry standards. Ideal for a wide range of applications, this EPROM offers fast access times and high memory density, making it perfect for your advanced electronic projects. Trust in Texas Instruments to provide you with the value, benefits, and advantages you need to take your designs to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body provides better protection against heat and moisture, ensuring the longevity and reliability of the EPROM chip.

Input/Output Type: COMMON

Common input/output type simplifies the integration of the EPROM chip into existing systems, making it easier to use.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes this EPROM chip compatible with a wide range of systems and applications.

No. of Terminals: 24

Having 24 terminals allows for easy connectivity and integration with other components in the system, enhancing versatility and functionality.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this EPROM chip can withstand high temperatures without sacrificing performance or reliability.

Organization: 4KX8

The 4KX8 organization provides a good balance between storage capacity and data retrieval speed, making this EPROM chip suitable for various applications.

Memory IC Type: UVPROM

UVPROM technology offers a reliable and cost-effective solution for non-volatile memory storage, ensuring data is retained even when power is lost.

Maximum Access Time: 300 ns

With a maximum access time of 300 nanoseconds, this EPROM chip delivers fast data access speeds, improving overall system performance.

Technical Specifications

EPROM TMS2732A-30JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

300 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T24

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Programming Voltage (V):

21

Qualification:

Not Qualified

Sub-Category:

EPROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS2732A-30JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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