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TMS27C128JE

Texas Instruments

TMS27C128JE by Texas Instruments

TMS27C128JE by Texas Instruments is a 16KX8 EPROM with 3-STATE output, operating at 5V. It has a max access time of 250ns and is ideal for industrial applications requiring reliable non-volatile memory storage in a ceramic, glass-sealed package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,781 parts In-Stock

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5,781

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Digiode

USA . 4,891 parts In-Stock

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Q Components

USA . 38 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 13 parts In-Stock

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Parana Technologies

USA . 1,517 parts In-Stock

1+ parts

$3.079

100+ parts

-

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$3.596

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1,517

$3.079

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$3.596

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IDEA Electronic Components Group

UK . 624 parts In-Stock

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$3.460

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$3.114

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624

$3.460

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$3.114

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ChromeModa Solutions

Germany . 480 parts In-Stock

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$3.460

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$2.837

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480

$3.460

$2.837

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AZTECH Wire

Italy . 229 parts In-Stock

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$19.275

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229

$19.275

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One Stop Electronics

USA . 876 parts In-Stock

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$25.000

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Corphita

USA . 1,004 parts In-Stock

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DigiPath Technology Company

USA . 100 parts In-Stock

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$3.120

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100

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Perfect Parts

USA . 85 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 38 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TMS27C128JE EPROM by Texas Instruments. Crafted from high-quality ceramic and glass-sealed materials, this rectangular package offers unparalleled performance in industrial settings. With a 16KX8 organization and 3-STATE output characteristics, this CMOS technology-based device delivers fast access times and low standby current, making it perfect for applications requiring secure and efficient memory solutions. Trust Texas Instruments to provide you with the value and benefits you need for your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Ceramic and glass-sealed package body material provides durability and resistance to environmental factors, making this product reliable for long-term use.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard electronic systems, making it easy to integrate into existing setups.

Memory IC Type: UVPROM

UVPROM technology offers non-volatile memory with the added benefit of being erasable and reprogrammable, making it versatile for different applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this EPROM can withstand harsh environmental conditions and maintain reliable performance.

Technical Specifications

EPROM TMS27C128JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C128JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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