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TM4100EBD9-6

Texas Instruments

TM4100EBD9-6 by Texas Instruments

TM4100EBD9-6 by Texas Instruments is a 4MX9 DRAM module with 37748736-bit memory density. Operating at 5V, it offers a max access time of 60ns and refresh cycles of 1024. Ideal for applications requiring fast page access in commercial temperature grades.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,338 parts In-Stock

1+ parts

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7,338

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Digiode

USA . 2,698 parts In-Stock

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2,698

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 437 parts In-Stock

1+ parts

$2.660

100+ parts

-

1k+ parts

$3.149

10k+ parts

-

437

$2.660

-

$3.149

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DigiPath Technology Company

USA . 871 parts In-Stock

1+ parts

$2.929

100+ parts

$2.695

1k+ parts

-

10k+ parts

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871

$2.929

$2.695

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ChromeModa Solutions

Germany . 4,568 parts In-Stock

1+ parts

$2.989

100+ parts

$2.451

1k+ parts

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4,568

$2.989

$2.451

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IDEA Electronic Components Group

UK . 1,877 parts In-Stock

1+ parts

$2.989

100+ parts

-

1k+ parts

$2.690

10k+ parts

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1,877

$2.989

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$2.690

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AZTECH Wire

Italy . 721 parts In-Stock

1+ parts

$16.534

100+ parts

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721

$16.534

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One Stop Electronics

USA . 969 parts In-Stock

1+ parts

$19.000

100+ parts

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969

$19.000

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Corphita

USA . 1,579 parts In-Stock

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1,579

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Overview

Get ready to experience superior performance with the TM4100EBD9-6 by Texas Instruments, a top-of-the-line DRAM module that guarantees reliability and efficiency. Designed with precision and expertise, this product is perfect for a wide range of applications, ensuring seamless operation in every use case. With Texas Instruments' reputation for excellence, you can trust that this memory module will exceed your expectations. Upgrade your system today and unlock the potential of your devices with the TM4100EBD9-6.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient use of space and easy integration into various electronics devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility and can improve overall system performance by allowing independent actions to take place concurrently.

Input/Output Type: COMMON

Common input/output type simplifies the design and integration process, making it easier to connect the DRAM module to other components.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage ensures compatibility with a wide range of systems and devices.

No. of Terminals: 30

Having 30 terminals provides ample connectivity options and allows for efficient data transfer between the DRAM module and the rest of the system.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this DRAM module can reliably perform in various environmental conditions.

Organization: 4MX9

The 4MX9 organization allows for efficient data storage and retrieval, making the DRAM module suitable for handling large amounts of data.

Output Characteristics: 3-STATE

Supporting 3-STATE output characteristics enables the DRAM module to drive multiple outputs efficiently, enhancing system performance.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0°C, this DRAM module can function reliably even in cold environments.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly package style offers compactness and durability, making the DRAM module suitable for small form factor devices.

Technical Specifications

DRAM TM4100EBD9-6 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N30

Memory Density:

37748736 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

30

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX9

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SIM30

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

23.114 mm

Maximum Standby Current:

.009 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

855 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Trade Compliance

TM4100EBD9-6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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