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TM4100GAD8-70

Texas Instruments

TM4100GAD8-70 by Texas Instruments

TM4100GAD8-70 by Texas Instruments is a 4MX8 DRAM module with 3-STATE output, operating at 5V. It features ASYNCHRONOUS mode and FAST PAGE access, suitable for applications requiring high-speed memory operations. With a memory density of 33554432 bits, it offers fast access time of 70ns in commercial temperature grades.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,786 parts In-Stock

1+ parts

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6,786

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Digiode

USA . 1,589 parts In-Stock

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1,589

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 135 parts In-Stock

1+ parts

$5.048

100+ parts

-

1k+ parts

$5.612

10k+ parts

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135

$5.048

-

$5.612

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DigiPath Technology Company

USA . 1,793 parts In-Stock

1+ parts

$5.559

100+ parts

$5.114

1k+ parts

-

10k+ parts

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1,793

$5.559

$5.114

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ChromeModa Solutions

Germany . 6,709 parts In-Stock

1+ parts

$5.672

100+ parts

$4.651

1k+ parts

-

10k+ parts

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6,709

$5.672

$4.651

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IDEA Electronic Components Group

UK . 105 parts In-Stock

1+ parts

$5.672

100+ parts

-

1k+ parts

$5.105

10k+ parts

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105

$5.672

-

$5.105

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AZTECH Wire

Italy . 631 parts In-Stock

1+ parts

$15.770

100+ parts

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631

$15.770

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One Stop Electronics

USA . 1,424 parts In-Stock

1+ parts

$28.000

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1,424

$28.000

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Corphita

USA . 1,896 parts In-Stock

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1,896

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Overview

Experience top-notch quality and reliability with the TM4100GAD8-70 by Texas Instruments, a leading manufacturer in the industry. This DRAM module offers seamless asynchronous operation, self-refresh capabilities, and common input/output type, making it ideal for a wide range of applications. With its fast page access mode and 3-state output characteristics, this memory module provides unmatched performance and efficiency. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations, providing value and benefits to customers seeking high-quality components for their electronic devices. Elevate your projects with the TM4100GAD8-70 and experience the difference today!

Feature Benefit Bullets

Package Shape: RECTANGULAR

A rectangular shape allows for efficient and compact packaging, making it easier to integrate into various electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in timing and reduces the need for synchronized clocks, making the product compatible with a wide range of systems.

Self Refresh: YES

Self-refresh capability helps in conserving power and maintaining data integrity during idle periods, enhancing overall performance and reliability.

Nominal Supply Voltage / Vsup (V): 5

A standard supply voltage of 5V ensures compatibility with most systems and simplifies power management.

No. of Terminals: 30

Having a sufficient number of terminals ensures proper connectivity and communication within the device, supporting seamless data transfer and processing.

Maximum Operating Temperature: 70 °C

The ability to operate at a maximum temperature of 70°C ensures reliable performance even under demanding conditions.

Organization: 4MX8

The 4Mx8 organization provides a balance between memory capacity and data width, offering efficient data storage and access capabilities.

Memory IC Type: FAST PAGE DRAM MODULE

Being a fast page DRAM module, it offers quick data access and retrieval speeds, improving overall system performance.

Technical Specifications

DRAM TM4100GAD8-70 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

AUTO/SELF REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N30

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

30

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX8

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SIM30

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

20.447 mm

Self Refresh:

YES

Maximum Standby Current:

.008 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

720 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Trade Compliance

TM4100GAD8-70 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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