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TM4100GAD8-60

Texas Instruments

TM4100GAD8-60 by Texas Instruments

TM4100GAD8-60 by Texas Instruments is a 4MX8 DRAM module with 4194304 words, operating at 5V. It features ASYNCHRONOUS mode, FAST PAGE access, and self-refresh capability. Ideal for applications requiring high-speed memory with a density of 33554432 bits in a MICROELECTRONIC ASSEMBLY package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,585 parts In-Stock

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8,585

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Digiode

USA . 1,614 parts In-Stock

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1,614

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Resion

USA . 41 parts In-Stock

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41

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Distributors (Availability)

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Semicontronic

India . 929 parts In-Stock

1+ parts

$1.000

100+ parts

$0.975

1k+ parts

$0.970

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929

$1.000

$0.975

$0.970

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Parana Technologies

USA . 1,786 parts In-Stock

1+ parts

$3.942

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$4.414

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1,786

$3.942

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$4.414

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DigiPath Technology Company

USA . 106 parts In-Stock

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$4.340

100+ parts

$3.993

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106

$4.340

$3.993

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ChromeModa Solutions

Germany . 4,030 parts In-Stock

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$4.429

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$3.632

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4,030

$4.429

$3.632

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IDEA Electronic Components Group

UK . 581 parts In-Stock

1+ parts

$4.429

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$3.986

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581

$4.429

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$3.986

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AZTECH Wire

Italy . 337 parts In-Stock

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$12.000

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337

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One Stop Electronics

USA . 678 parts In-Stock

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$19.000

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Corphita

USA . 2,026 parts In-Stock

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Overview

Experience top-of-the-line memory performance with the TM4100GAD8-60 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers unparalleled quality and reliability in their products. This DRAM module boasts fast page access mode and self-refresh capabilities, making it ideal for a wide range of applications. Whether you're working on industrial automation or networking systems, this product offers superior value, benefits, and advantages to meet your needs. Upgrade your technology today with the TM4100GAD8-60 and experience the difference Texas Instruments brings to the table.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape helps in efficient packaging and stacking of the product, making it space-saving.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent data transfer, enhancing flexibility and performance.

Self Refresh: YES

Self-refresh feature helps in maintaining data integrity and minimizing power consumption.

Input/Output Type: COMMON

Common input/output type simplifies circuit design and interfacing with other components.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V ensures compatibility with a wide range of systems.

No. of Terminals: 30

Having a higher number of terminals allows for more connectivity options and functionality.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, the product can withstand harsh environmental conditions.

Organization: 4MX8

Organized as 4 megabits by 8 bits, providing a balance between storage capacity and data retrieval speed.

Output Characteristics: 3-STATE

3-state output allows the device to have high impedance when disabled, enabling efficient bus sharing.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, improving overall efficiency.

Memory Width: 8

Having a memory width of 8 bits allows for faster data transfers and processing capabilities.

Maximum Supply Current: 840 mA

With a maximum supply current of 840 mA, the product can deliver high performance without overheating.

Maximum Access Time: 60 ns

Fast access time of 60 nanoseconds ensures quick data retrieval and processing, enhancing overall performance.

Technical Specifications

DRAM TM4100GAD8-60 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

60 ns

Additional Features:

AUTO/SELF REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N30

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

30

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX8

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SIM30

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

20.447 mm

Self Refresh:

YES

Maximum Standby Current:

.008 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

840 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Trade Compliance

TM4100GAD8-60 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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