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TM4100EBD9-80

Texas Instruments

TM4100EBD9-80 by Texas Instruments

TM4100EBD9-80 by Texas Instruments is a 4MX9 DRAM module with 37748736-bit memory density. It operates at 5V, has an access time of 80ns, and uses FAST PAGE technology. Ideal for applications requiring fast data access in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,859 parts In-Stock

1+ parts

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4,859

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Digiode

USA . 2,189 parts In-Stock

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2,189

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ACDS - Activité Composants Distribution Service

France . 13 parts In-Stock

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13

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Distributors (Availability)

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Parana Technologies

USA . 116 parts In-Stock

1+ parts

$3.556

100+ parts

-

1k+ parts

$4.079

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116

$3.556

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$4.079

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ChromeModa Solutions

Germany . 1,983 parts In-Stock

1+ parts

$3.996

100+ parts

$3.277

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1,983

$3.996

$3.277

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IDEA Electronic Components Group

UK . 1,536 parts In-Stock

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$3.996

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$3.596

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1,536

$3.996

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$3.596

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One Stop Electronics

USA . 1,585 parts In-Stock

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$5.000

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1,585

$5.000

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AZTECH Wire

Italy . 251 parts In-Stock

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$11.227

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251

$11.227

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Corphita

USA . 3,878 parts In-Stock

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3,878

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DigiPath Technology Company

USA . 1,528 parts In-Stock

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$3.603

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1,528

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$3.603

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Perfect Parts

USA . 29 parts In-Stock

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29

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Cyclops Electronics Ltd (Excess)

UK . 13 parts In-Stock

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Overview

Enhance your electronic devices with the TM4100EBD9-80 from Texas Instruments, a high-quality DRAM module designed to optimize performance. With Texas Instruments' reputation for excellence in manufacturing, you can trust in the reliability and durability of this product. Perfect for a wide range of applications, this asynchronous memory module offers customers exceptional value with its fast access time of 80ns, 3-state output characteristics, and 4M x 9 organization. Upgrade your technology today with the TM4100EBD9-80 and experience the benefits of cutting-edge memory technology.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient and compact placement of the DRAM modules in electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables independent operation of memory cells, leading to faster data retrieval and processing.

Nominal Supply Voltage: 5V

Stable supply voltage of 5V ensures reliable and consistent performance of the DRAM module.

Memory IC Type: FAST PAGE DRAM MODULE

Fast Page technology allows for quick access to data, making this DRAM module suitable for applications requiring high-speed data processing.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this DRAM module can function efficiently even under moderate heat conditions.

Technical Specifications

DRAM TM4100EBD9-80 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

80 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N30

Memory Density:

37748736 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

30

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX9

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SIM30

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

23.114 mm

Maximum Standby Current:

.009 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

675 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Trade Compliance

TM4100EBD9-80 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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