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TM4161EP5-20L

Texas Instruments

TM4161EP5-20L by Texas Instruments

TM4161EP5-20L by Texas Instruments is a 64KX5 DRAM with 3-STATE output, operating in ASYNCHRONOUS mode at 5V. It has a memory density of 327680 bit and refresh cycles of 256. Ideal for VIDEO DRAM MODULE applications due to its fast access time of 200 ns and commercial temperature grade.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,743 parts In-Stock

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8,743

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Digiode

USA . 1,932 parts In-Stock

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1,932

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,412 parts In-Stock

1+ parts

$3.691

100+ parts

-

1k+ parts

$4.195

10k+ parts

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1,412

$3.691

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$4.195

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DigiPath Technology Company

USA . 1,845 parts In-Stock

1+ parts

$4.064

100+ parts

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1,845

$4.064

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ChromeModa Solutions

Germany . 2,947 parts In-Stock

1+ parts

$4.147

100+ parts

$3.401

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2,947

$4.147

$3.401

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IDEA Electronic Components Group

UK . 2,043 parts In-Stock

1+ parts

$4.147

100+ parts

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$3.732

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2,043

$4.147

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$3.732

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AZTECH Wire

Italy . 579 parts In-Stock

1+ parts

$16.980

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579

$16.980

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One Stop Electronics

USA . 821 parts In-Stock

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$21.000

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821

$21.000

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Corphita

USA . 451 parts In-Stock

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451

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Overview

Experience superior performance and reliability with the TM4161EP5-20L by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality DRAM modules that are perfect for a wide range of applications. This innovative product offers customers exceptional value, benefits, and advantages, making it the ideal choice for those looking for high-performance memory solutions. Upgrade your systems with Texas Instruments and experience the difference today!

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape allows for easy installation and space-saving designs in electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility and timing independence, making this product suitable for a variety of applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard electronic systems and power sources.

No. of Terminals: 35

Having 35 terminals provides ample connectivity options and signal paths for efficient data transfer.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

The microelectronic assembly package style offers compactness and reliability in construction, ideal for high-density memory applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory module can withstand moderate heat levels during operation.

Organization: 64KX5

The 64K x 5 organization allows for efficient data storage and retrieval, ideal for high-speed computing and processing.

Output Characteristics: 3-STATE

The 3-STATE output characteristics enable multiple memory modules to be connected without contention, enhancing system scalability.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures reliable performance even in colder environments.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces the chance of connection errors, ensuring reliable operation.

No. of Ports: 2

Having 2 ports allows for simultaneous data transfer and increased bandwidth, improving overall system performance.

Minimum Supply Voltage (Vsup): 4.5 V

Operating at a minimum supply voltage of 4.5V ensures stable and reliable performance even under varying power conditions.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures compatibility with standard operating environments, making this memory module suitable for commercial applications.

Access Mode: PAGE

The page access mode allows for efficient data access and manipulation, enhancing overall system responsiveness.

Technology: NMOS

NMOS technology offers low power consumption and fast switching speeds, making this memory module energy-efficient and high-performing.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical support and reliable connections, ensuring durability in harsh operating conditions.

No. of Words: 65536 words

With a capacity of 65536 words, this memory module offers ample storage space for data-intensive applications.

Memory Width: 5

A memory width of 5 bits allows for efficient data processing and retrieval, suitable for multimedia and graphics applications.

Terminal Pitch: 2.54 mm

Having a terminal pitch of 2.54mm facilitates easy integration with standard PCB layouts and connectors, simplifying installation.

No. of Words Code: 64K

The 64K words code provides a standardized format for data organization and addressing, ensuring compatibility with other memory modules.

Maximum Supply Voltage (Vsup): 5.5 V

Operating at a maximum supply voltage of 5.5V allows for a safe margin of voltage tolerance, protecting the memory module from potential damage.

Memory Density: 327680 bit

With a memory density of 327680 bits, this memory module offers high data storage capacity in a compact form factor, ideal for memory-intensive applications.

Memory IC Type: VIDEO DRAM MODULE

Being a video DRAM module, this product is specifically designed for high-performance video processing and rendering applications, making it ideal for multimedia and graphics systems.

Refresh Cycles: 256

With 256 refresh cycles, this memory module ensures data integrity and reliability over extended periods of use, suitable for continuous operation.

Maximum Access Time: 200 ns

With a maximum access time of 200ns, this memory module offers fast data retrieval and processing speeds, enhancing system performance.

Technical Specifications

DRAM TM4161EP5-20L attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

PAGE

Maximum Access Time:

200 ns

Additional Features:

RAS ONLY REFRESH; 256 X 5 SAM PORT

JESD-30 Code:

R-XSMA-T35

Memory Density:

327680 bit

Memory IC Type:

Memory Width:

5

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

35

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX5

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Equivalence Code:

SIP35,.2

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

256

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

NMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TM4161EP5-20L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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