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TM4161EV4-20L

Texas Instruments

TM4161EV4-20L by Texas Instruments

TM4161EV4-20L by Texas Instruments is a 64KX4 DRAM with 3-STATE output, operating in ASYNCHRONOUS mode at 5V. Ideal for VIDEO DRAM MODULE applications, it offers a memory density of 262144 bit and refresh cycles of 256, with max access time of 200 ns.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,463 parts In-Stock

1+ parts

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7,463

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Digiode

USA . 2,084 parts In-Stock

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2,084

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 266 parts In-Stock

1+ parts

$5.101

100+ parts

-

1k+ parts

$5.686

10k+ parts

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266

$5.101

-

$5.686

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IDEA Electronic Components Group

UK . 2,012 parts In-Stock

1+ parts

$5.732

100+ parts

-

1k+ parts

$5.159

10k+ parts

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2,012

$5.732

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$5.159

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ChromeModa Solutions

Germany . 1,121 parts In-Stock

1+ parts

$5.732

100+ parts

$4.700

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-

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1,121

$5.732

$4.700

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One Stop Electronics

USA . 1,289 parts In-Stock

1+ parts

$13.000

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1,289

$13.000

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AZTECH Wire

Italy . 663 parts In-Stock

1+ parts

$19.501

100+ parts

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663

$19.501

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DigiPath Technology Company

USA . 1,903 parts In-Stock

1+ parts

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100+ parts

$5.168

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1,903

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$5.168

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Corphita

USA . 1,855 parts In-Stock

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1,855

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Overview

Experience superior performance and reliability with the TM4161EV4-20L by Texas Instruments, a leading manufacturer in the industry. This high-quality DRAM module offers seamless integration into various applications, providing unmatched value and efficiency to customers. With its asynchronous operation mode and 3-STATE output characteristics, this product ensures optimal functionality and performance. Trust Texas Instruments to deliver top-of-the-line technology that meets your needs and exceeds your expectations. Choose the TM4161EV4-20L for unparalleled quality and reliability in memory solutions.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape makes the product easily stackable and takes up less space in a circuit board layout.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent access to memory locations without needing to wait for a clock signal, providing faster performance.

Nominal Supply Voltage: 5V

The 5V supply voltage ensures compatibility with standard electronic components and power supplies.

Maximum Operating Temperature: 70°C

The high maximum operating temperature ensures reliability in a wide range of environmental conditions.

Organization: 64KX4

The 64KX4 organization indicates a memory capacity of 64 kilobits with a word width of 4 bits, suitable for many data processing applications.

Technology: NMOS

NMOS technology offers fast switching speeds and low power consumption, ideal for high-performance memory applications.

Memory IC Type: VIDEO DRAM MODULE

Being a Video DRAM Module, this product is specifically designed for video processing applications, offering optimized performance for graphics and multimedia.

Refresh Cycles: 256

The 256 refresh cycles ensure data integrity and prevent data loss in high-speed memory operations.

Maximum Access Time: 200 ns

The low maximum access time of 200 ns ensures quick retrieval of data, improving overall system performance.

Technical Specifications

DRAM TM4161EV4-20L attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

PAGE

Maximum Access Time:

200 ns

Additional Features:

RAS ONLY REFRESH; 256 X 4 SAM PORT

JESD-30 Code:

R-XSMA-T31

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

31

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX4

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Equivalence Code:

SIP31,.2

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

256

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

NMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TM4161EV4-20L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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