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TM4100EAD9-70

Texas Instruments

TM4100EAD9-70 by Texas Instruments

TM4100EAD9-70 by Texas Instruments is a 4MX9 DRAM module with 37748736-bit memory density. Operating at 5V, it offers fast page access mode with 70ns max access time. Ideal for applications requiring high-speed data storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,733 parts In-Stock

1+ parts

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6,733

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Digiode

USA . 4,911 parts In-Stock

1+ parts

-

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-

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4,911

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,583 parts In-Stock

1+ parts

$4.228

100+ parts

-

1k+ parts

$4.664

10k+ parts

-

1,583

$4.228

-

$4.664

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DigiPath Technology Company

USA . 762 parts In-Stock

1+ parts

$4.656

100+ parts

$4.284

1k+ parts

-

10k+ parts

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762

$4.656

$4.284

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IDEA Electronic Components Group

UK . 2,273 parts In-Stock

1+ parts

$4.751

100+ parts

-

1k+ parts

$4.276

10k+ parts

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2,273

$4.751

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$4.276

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ChromeModa Solutions

Germany . 109 parts In-Stock

1+ parts

$4.751

100+ parts

$3.896

1k+ parts

-

10k+ parts

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109

$4.751

$3.896

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AZTECH Wire

Italy . 645 parts In-Stock

1+ parts

$16.343

100+ parts

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645

$16.343

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One Stop Electronics

USA . 984 parts In-Stock

1+ parts

$27.000

100+ parts

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984

$27.000

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Corphita

USA . 2,724 parts In-Stock

1+ parts

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2,724

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Overview

Unleash the power of cutting-edge technology with the TM4100EAD9-70 by Texas Instruments! As a leading manufacturer in the industry, Texas Instruments delivers high-quality DRAM modules that are designed for optimal performance and reliability. With a package shape of RECTANGULAR and an operating mode of ASYNCHRONOUS, this module is perfect for a wide range of applications. Whether you're looking to upgrade your computer's memory or enhance the speed of your electronic devices, the TM4100EAD9-70 offers superior value, benefits, and advantages that will elevate your user experience to new heights. Upgrade to Texas Instruments today and experience the difference!

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of board space and easy integration into various electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent access to each memory location, providing flexibility and speed in data retrieval and storage.

Self Refresh: YES

The self-refresh capability helps in maintaining data integrity during power outages or interruptions, ensuring reliable performance.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage offers standard power compatibility and stable performance in various applications.

No. of Terminals: 30

With 30 terminals, this DRAM module provides sufficient connectivity options for interfacing with other components or devices.

Maximum Operating Temperature: 70 °C

The ability to operate at temperatures up to 70°C ensures reliability and stability under varying environmental conditions.

Organization: 4MX9

Organized as 4M words of 9 bits each, this DRAM module offers a balance between memory capacity and data width for efficient data storage and retrieval.

Technology: CMOS

The CMOS technology used in this DRAM module ensures low power consumption, high speed, and reliability, making it suitable for a wide range of applications.

Technical Specifications

DRAM TM4100EAD9-70 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

AUTO/SELF REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N30

Memory Density:

37748736 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

30

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX9

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SIM30

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

22.987 mm

Self Refresh:

YES

Maximum Standby Current:

.009 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

810 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Trade Compliance

TM4100EAD9-70 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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