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TM4100GBD8-6

Texas Instruments

TM4100GBD8-6 by Texas Instruments

TM4100GBD8-6 by Texas Instruments is a 4MX8 DRAM module with 3-STATE output, operating at 5V. It features FAST PAGE access mode, CMOS technology, and 60ns max access time. Ideal for applications requiring high-speed memory solutions in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,264 parts In-Stock

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3,264

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Digiode

USA . 1,872 parts In-Stock

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1,872

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Distributors (Availability)

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Parana Technologies

USA . 1,861 parts In-Stock

1+ parts

$2.430

100+ parts

-

1k+ parts

$2.927

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1,861

$2.430

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$2.927

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DigiPath Technology Company

USA . 1,949 parts In-Stock

1+ parts

$2.675

100+ parts

$2.461

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1,949

$2.675

$2.461

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ChromeModa Solutions

Germany . 5,202 parts In-Stock

1+ parts

$2.730

100+ parts

$2.239

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5,202

$2.730

$2.239

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IDEA Electronic Components Group

UK . 259 parts In-Stock

1+ parts

$2.730

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$2.457

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259

$2.730

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$2.457

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One Stop Electronics

USA . 1,597 parts In-Stock

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$6.000

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1,597

$6.000

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AZTECH Wire

Italy . 714 parts In-Stock

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$14.219

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714

$14.219

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Corphita

USA . 4,391 parts In-Stock

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Overview

Experience the next level of performance with the TM4100GBD8-6 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality DRAM modules that are perfect for a wide range of applications. Whether you're looking to enhance your computing experience or boost the speed of your devices, this product offers unmatched value, benefits, and advantages. Trust in Texas Instruments to provide reliable and efficient solutions for all your memory needs.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for efficient and space-saving packaging, making it ideal for compact devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent control of data transfer, enhancing flexibility and performance.

Input/Output Type: COMMON

Common input/output type simplifies interfacing with other components, enabling seamless integration into systems.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage ensures compatibility with various systems and power sources.

Power Supplies (V): 5

Stable power supplies at 5V ensure reliable performance and data integrity.

No. of Terminals: 30

Having 30 terminals allows for efficient connection and communication with other components.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly offers high-density packaging, reducing space requirements and enhancing performance.

Maximum Operating Temperature: 70 °C

Ability to operate at relatively high temperatures ensures reliable performance in various environmental conditions.

Organization: 4MX8

Organized as 4 megabits by 8, providing a good balance between storage capacity and data access speed.

Output Characteristics: 3-STATE

3-state output allows for multiple logical levels, enhancing data transmission efficiency.

Minimum Operating Temperature: 0 °C

Can operate at low temperatures, making it suitable for a wide range of applications.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection processes.

Maximum Seated Height: 23.114 mm

Low seated height enables compact device design and efficient space utilization.

Minimum Supply Voltage (Vsup): 4.75 V

Operates at a minimum supply voltage of 4.75V, ensuring reliable performance even under slightly reduced voltage conditions.

Temperature Grade: COMMERCIAL

Commercial-grade temperature range makes it suitable for standard operating environments.

Access Mode: FAST PAGE

Fast page access mode allows for quick retrieval of data, improving overall system performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Terminal Form: NO LEAD

No-lead terminal form simplifies manufacturing processes and minimizes environmental impact.

Maximum Supply Current: 760 mA

With a maximum supply current of 760 mA, the product efficiently manages power consumption.

No. of Words: 4194304 words

Large number of words allows for extensive data storage and processing capabilities.

Memory Width: 8

Memory width of 8 bits provides sufficient data bandwidth for faster data transfer.

Terminal Pitch: 2.54 mm

Terminal pitch of 2.54 mm allows for easier and more accurate connections.

No. of Words Code: 4M

Code representing 4 million words indicates high storage capacity for data-intensive applications.

Maximum Supply Voltage (Vsup): 5.25 V

Operating at a maximum supply voltage of 5.25V ensures voltage compatibility and stability.

Memory Density: 33554432 bit

High memory density of 33554432 bits maximizes data storage capacity.

Memory IC Type: FAST PAGE DRAM MODULE

Being a fast page DRAM module, it provides quick access to stored data, improving system performance.

Maximum Standby Current: 0.008 Amp

Low standby current of 0.008 Amp ensures energy efficiency during idle periods.

Refresh Cycles: 1024

With 1024 refresh cycles, the product maintains data integrity over extended periods of use.

Maximum Access Time: 60 ns

Fast maximum access time of 60 ns ensures quick data retrieval for efficient system operation.

Technical Specifications

DRAM TM4100GBD8-6 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N30

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

30

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX8

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SIM30

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

23.114 mm

Maximum Standby Current:

.008 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

760 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Trade Compliance

TM4100GBD8-6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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