Loading...

TM4100GBD8-80

Texas Instruments

TM4100GBD8-80 by Texas Instruments

TM4100GBD8-80 by Texas Instruments is a 4MX8 DRAM module with 3-STATE output, operating at 5V. It features an access time of 80ns and refresh cycles of 1024, suitable for fast page applications in commercial temperature grades.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,680 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,680

-

-

-

-

Vyrian

USA . 2,849 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,849

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,727 parts In-Stock

1+ parts

$4.572

100+ parts

-

1k+ parts

$5.025

10k+ parts

-

1,727

$4.572

-

$5.025

-

DigiPath Technology Company

USA . 1,203 parts In-Stock

1+ parts

$5.034

100+ parts

$4.632

1k+ parts

-

10k+ parts

-

1,203

$5.034

$4.632

-

-

ChromeModa Solutions

Germany . 3,207 parts In-Stock

1+ parts

$5.137

100+ parts

$4.212

1k+ parts

-

10k+ parts

-

3,207

$5.137

$4.212

-

-

IDEA Electronic Components Group

UK . 193 parts In-Stock

1+ parts

$5.137

100+ parts

-

1k+ parts

$4.623

10k+ parts

-

193

$5.137

-

$4.623

-

AZTECH Wire

Italy . 629 parts In-Stock

1+ parts

$14.118

100+ parts

-

1k+ parts

-

10k+ parts

-

629

$14.118

-

-

-

One Stop Electronics

USA . 765 parts In-Stock

1+ parts

$27.000

100+ parts

-

1k+ parts

-

10k+ parts

-

765

$27.000

-

-

-

Corphita

USA . 4,605 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,605

-

-

-

-

Overview

Get ready to experience unparalleled performance and reliability with the TM4100GBD8-80 from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality products that meet the highest standards. This DRAM module is perfect for a wide range of applications, offering fast access times and efficient power consumption. Elevate your projects with the superior value and benefits that this product provides. Trust Texas Instruments to deliver excellence in every aspect, ensuring you get the best results every time.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape makes it easy to integrate into various devices and systems.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to memory cells, improving overall system performance.

Input/Output Type: COMMON

Common input/output type simplifies communication between the DRAM and other components in the system.

Nominal Supply Voltage / Vsup (V): 5

Provides a stable and reliable power source for the DRAM module.

No. of Terminals: 30

Sufficient number of terminals for connecting to other components in the system.

Maximum Operating Temperature: 70 °C

Operates reliably at high temperatures, making it suitable for a wide range of applications.

Organization: 4MX8

Organized into 4 million words of 8 bits each, providing high memory density.

Output Characteristics: 3-STATE

3-state output allows for multiple drivers to control the same bus, increasing flexibility in the system design.

Maximum Supply Current: 600 mA

Low supply current consumption helps conserve power and extend battery life in portable devices.

Access Mode: FAST PAGE

Fast page access mode speeds up data retrieval and storage, improving overall system performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the DRAM module reliable and efficient.

Memory IC Type: FAST PAGE DRAM MODULE

Fast page memory IC type enhances data access speed and throughput, making it ideal for high-performance systems.

Technical Specifications

DRAM TM4100GBD8-80 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

80 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N30

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

30

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX8

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SIM30

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

23.114 mm

Maximum Standby Current:

.008 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

600 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Trade Compliance

TM4100GBD8-80 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 19