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TM4100GBD8-70

Texas Instruments

TM4100GBD8-70 by Texas Instruments

TM4100GBD8-70 by Texas Instruments is a 4MX8 DRAM with 70ns access time, operating at 5V. It features 3-STATE output and FAST PAGE access mode. Ideal for applications requiring high-speed memory in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,130 parts In-Stock

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4,130

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Vyrian

USA . 3,948 parts In-Stock

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3,948

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 721 parts In-Stock

1+ parts

$2.230

100+ parts

-

1k+ parts

$2.735

10k+ parts

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721

$2.230

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$2.735

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DigiPath Technology Company

USA . 592 parts In-Stock

1+ parts

$2.456

100+ parts

$2.259

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-

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592

$2.456

$2.259

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ChromeModa Solutions

Germany . 3,091 parts In-Stock

1+ parts

$2.506

100+ parts

$2.055

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3,091

$2.506

$2.055

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IDEA Electronic Components Group

UK . 1,665 parts In-Stock

1+ parts

$2.506

100+ parts

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$2.255

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1,665

$2.506

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$2.255

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One Stop Electronics

USA . 582 parts In-Stock

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$11.000

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582

$11.000

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AZTECH Wire

Italy . 275 parts In-Stock

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$16.237

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275

$16.237

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Corphita

USA . 1,855 parts In-Stock

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1,855

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Overview

Unlock the power of reliable and efficient memory with the TM4100GBD8-70 by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments delivers top-quality DRAM modules that are perfect for a variety of applications. Whether you're looking to enhance your computing experience or streamline your data storage, this product offers unmatched value and performance. With features like fast page access mode and low standby current, the TM4100GBD8-70 is the perfect choice for customers who demand excellence in their technology products. Elevate your memory capabilities today with Texas Instruments.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular package shape allows for easy and efficient integration into various electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility and allows for independent access to memory locations without having to wait for synchronization signals.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage ensures compatibility with a wide range of systems and applications.

No. of Terminals: 30

Sufficient number of terminals for effective connectivity and communication within the system.

Memory Width: 8

8-bit memory width allows for efficient data storage and retrieval operations.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Refresh Cycles: 1024

High number of refresh cycles ensures data integrity and reliability over extended periods of use.

Maximum Access Time: 70 ns

Fast access time ensures quick data retrieval and processing, enhancing overall system performance.

Technical Specifications

DRAM TM4100GBD8-70 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N30

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

30

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX8

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SIM30

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

23.114 mm

Maximum Standby Current:

.008 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

680 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Trade Compliance

TM4100GBD8-70 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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