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TM4161EP5-15L

Texas Instruments

TM4161EP5-15L by Texas Instruments

TM4161EP5-15L by Texas Instruments is a 64KX5 DRAM with 327680 bit memory density. It operates asynchronously at 5V, with a max access time of 150ns. Ideal for video applications due to its 3-STATE output characteristics and PAGE access mode.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,863 parts In-Stock

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6,863

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Digiode

USA . 4,431 parts In-Stock

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4,431

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Distributors (Availability)

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Parana Technologies

USA . 2,115 parts In-Stock

1+ parts

$3.807

100+ parts

-

1k+ parts

$4.297

10k+ parts

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2,115

$3.807

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$4.297

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DigiPath Technology Company

USA . 560 parts In-Stock

1+ parts

$4.192

100+ parts

$3.857

1k+ parts

-

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560

$4.192

$3.857

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ChromeModa Solutions

Germany . 5,450 parts In-Stock

1+ parts

$4.278

100+ parts

$3.508

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5,450

$4.278

$3.508

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IDEA Electronic Components Group

UK . 645 parts In-Stock

1+ parts

$4.278

100+ parts

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$3.850

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645

$4.278

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$3.850

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One Stop Electronics

USA . 1,495 parts In-Stock

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$6.000

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1,495

$6.000

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AZTECH Wire

Italy . 811 parts In-Stock

1+ parts

$17.106

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811

$17.106

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Corphita

USA . 949 parts In-Stock

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949

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Overview

Experience unparalleled performance and reliability with the TM4161EP5-15L by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality DRAM products that are perfect for a wide range of applications. Offering a memory density of 327680 bits and an organization of 64KX5, this video DRAM module is designed to meet the demands of today's technology-driven world. With a nominal supply voltage of 5V and asynchronous operating mode, this product provides customers with the value, benefits, and advantages they need to excel in their projects. Trust Texas Instruments for all your memory needs and experience the difference firsthand.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration and placement within electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables efficient data transfer without the need for synchronization signals.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard voltage levels in electronic systems.

No. of Terminals: 35

Having 35 terminals provides versatility in connectivity options for the DRAM module.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly package style offers compact and efficient design for space-constrained applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this DRAM module can function reliably in a variety of environments.

Organization: 64KX5

Organized as 64KX5, this DRAM module offers a balance between capacity and speed for memory access.

Output Characteristics: 3-STATE

3-STATE output characteristics allow for multiple devices to share the same data bus without interference.

Minimum Operating Temperature: 0 °C

Capable of operating at a minimum temperature of 0°C ensures reliable performance in cold environments.

Terminal Position: SINGLE

Single terminal position simplifies installation and handling of the DRAM module.

No. of Ports: 2

Having 2 ports enables simultaneous data access and retrieval for improved performance.

Minimum Supply Voltage (Vsup): 4.5 V

With a minimum supply voltage of 4.5V, this DRAM module can operate efficiently even at lower voltage levels.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures that the DRAM module is suitable for standard commercial applications.

Access Mode: PAGE

Page access mode allows for efficient and fast access to specific memory locations within the DRAM module.

Technology: NMOS

NMOS technology offers low power consumption and high speed performance for the DRAM module.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure and reliable connections for the DRAM module.

No. of Words: 65536 words

With 65536 words capacity, this DRAM module offers ample storage for data and instructions.

Memory Width: 5

Having a memory width of 5 bits allows for efficient data transfer and processing within the DRAM module.

Terminal Pitch: 2.54 mm

Terminal pitch of 2.54mm enables easy connection and integration of the DRAM module within circuit boards.

No. of Words Code: 64K

Using a 64K word code simplifies addressing and access to specific memory locations within the DRAM module.

Maximum Supply Voltage (Vsup): 5.5 V

Operating at a maximum supply voltage of 5.5V ensures compatibility with higher voltage systems without risk of damage.

Memory Density: 327680 bit

With a memory density of 327680 bits, this DRAM module offers sufficient storage capacity for various applications.

Memory IC Type: VIDEO DRAM MODULE

Being a Video DRAM Module, this product is optimized for high-speed, high-resolution video applications.

Refresh Cycles: 256

Having 256 refresh cycles ensures data integrity and reliability in continuous operation over extended periods.

Maximum Access Time: 150 ns

With a maximum access time of 150ns, this DRAM module offers fast data retrieval and processing for efficient performance.

Technical Specifications

DRAM TM4161EP5-15L attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

PAGE

Maximum Access Time:

150 ns

Additional Features:

RAS ONLY REFRESH; 256 X 5 SAM PORT

JESD-30 Code:

R-XSMA-T35

Memory Density:

327680 bit

Memory IC Type:

Memory Width:

5

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

35

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX5

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Equivalence Code:

SIP35,.2

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

256

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

NMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TM4161EP5-15L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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