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TM4100EBD9-70

Texas Instruments

TM4100EBD9-70 by Texas Instruments

TM4100EBD9-70 by Texas Instruments is a 4MX9 DRAM module with 37748736-bit memory density. Operating at 5V, it offers fast page access mode with a max access time of 70ns. Ideal for applications requiring high-speed data storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,448 parts In-Stock

1+ parts

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6,448

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Digiode

USA . 3,028 parts In-Stock

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3,028

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,143 parts In-Stock

1+ parts

$4.417

100+ parts

-

1k+ parts

$4.839

10k+ parts

-

2,143

$4.417

-

$4.839

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DigiPath Technology Company

USA . 795 parts In-Stock

1+ parts

$4.864

100+ parts

$4.475

1k+ parts

-

10k+ parts

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795

$4.864

$4.475

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ChromeModa Solutions

Germany . 5,780 parts In-Stock

1+ parts

$4.963

100+ parts

$4.070

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-

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5,780

$4.963

$4.070

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IDEA Electronic Components Group

UK . 917 parts In-Stock

1+ parts

$4.963

100+ parts

-

1k+ parts

$4.467

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917

$4.963

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$4.467

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AZTECH Wire

Italy . 258 parts In-Stock

1+ parts

$8.607

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258

$8.607

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One Stop Electronics

USA . 1,497 parts In-Stock

1+ parts

$27.000

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1,497

$27.000

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Corphita

USA . 3,643 parts In-Stock

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3,643

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Overview

Enhance your electronic devices with the TM4100EBD9-70 by Texas Instruments, a high-quality DRAM module designed to optimize performance and efficiency. Texas Instruments, a trusted manufacturer in the industry, ensures reliability and durability in every product. Perfect for a wide range of applications, this asynchronous DRAM offers fast page access mode and 3-state output characteristics. With a memory density of 37748736 bits and maximum operating temperature of 70°C, this module provides seamless operation and enhanced functionality. Upgrade your systems today with the TM4100EBD9-70 and experience superior quality and performance like never before.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration and stacking in various electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and flexible access to memory cells, enhancing overall performance.

Input/Output Type: COMMON

Common input/output type simplifies interfacing with other components and devices.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with most electronic systems.

Power Supplies (V): 5

Consistent power supply of 5V ensures stable and reliable operation.

No. of Terminals: 30

Having 30 terminals allows for effective connectivity and communication with the rest of the system.

Organization: 4MX9

Organized in a 4MX9 configuration for efficient memory storage and retrieval.

Output Characteristics: 3-STATE

3-state output characteristics provide flexibility in data transmission and processing.

Minimum Operating Temperature: 0 °C

Capable of operating at low temperatures, ensuring reliability even in challenging environments.

Maximum Seated Height: 23.114 mm

Compact maximum seated height allows for space-efficient placement in electronic devices.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, ideal for memory modules.

No. of Words: 4194304 words

Large number of words available for storage and processing of data.

Memory Width: 9

Memory width of 9 provides sufficient data handling capabilities for various applications.

Memory Density: 37748736 bit

High memory density ensures efficient utilization of space and resources.

Refresh Cycles: 1024

Having 1024 refresh cycles ensures data integrity and reliability over extended periods of use.

Maximum Access Time: 70 ns

Fast maximum access time allows for quick retrieval and processing of data.

Technical Specifications

DRAM TM4100EBD9-70 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N30

Memory Density:

37748736 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

30

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX9

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SIM30

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

23.114 mm

Maximum Standby Current:

.009 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

765 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Trade Compliance

TM4100EBD9-70 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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