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TM4100GAD8-80

Texas Instruments

TM4100GAD8-80 by Texas Instruments

TM4100GAD8-80 by Texas Instruments is a 4MX8 DRAM module with 3-STATE output, operating at 5V. It features ASYNCHRONOUS mode, FAST PAGE access, and self-refresh capability. Ideal for applications requiring fast memory access and common I/O type in microelectronic assemblies.

Median Price

$32.445

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 93 parts In-Stock

1+ parts

-

100+ parts

$28.840

1k+ parts

$25.810

10k+ parts

$24.290

93

-

$28.840

$25.810

$24.290

DigiKey

USA . 93 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

93

-

-

-

-

Verical

USA . 68 parts In-Stock

1+ parts

-

100+ parts

$36.050

1k+ parts

$32.263

10k+ parts

$30.363

68

-

$36.050

$32.263

$30.363

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,417 parts In-Stock

1+ parts

$30.448

100+ parts

-

1k+ parts

-

10k+ parts

-

2,417

$30.448

-

-

-

Vyrian

USA . 3,314 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,314

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,044 parts In-Stock

1+ parts

$4.739

100+ parts

-

1k+ parts

$5.238

10k+ parts

-

2,044

$4.739

-

$5.238

-

DigiPath Technology Company

USA . 59 parts In-Stock

1+ parts

$5.218

100+ parts

$4.801

1k+ parts

-

10k+ parts

-

59

$5.218

$4.801

-

-

ChromeModa Solutions

Germany . 3,533 parts In-Stock

1+ parts

$5.325

100+ parts

$4.366

1k+ parts

-

10k+ parts

-

3,533

$5.325

$4.366

-

-

IDEA Electronic Components Group

UK . 436 parts In-Stock

1+ parts

$5.325

100+ parts

-

1k+ parts

$4.792

10k+ parts

-

436

$5.325

-

$4.792

-

Corphita

USA . 3,688 parts In-Stock

1+ parts

$28.845

100+ parts

-

1k+ parts

-

10k+ parts

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3,688

$28.845

-

-

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Microchip USA

USA . 2,164 parts In-Stock

1+ parts

$70.750

100+ parts

$69.520

1k+ parts

$68.900

10k+ parts

$68.290

2,164

$70.750

$69.520

$68.900

$68.290

EMSNET (Excess)

USA . 60 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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60

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Overview

Enhance your electronic devices with the TM4100GAD8-80 by Texas Instruments, a high-quality DRAM module that offers reliable performance and seamless integration. Designed with cutting-edge technology, this asynchronous memory module boasts a self-refresh feature and fast page access mode for optimal efficiency. Whether you're upgrading your computer or enhancing your gaming experience, this product delivers exceptional value and benefits. Trust Texas Instruments for industry-leading solutions that elevate your applications to the next level. Upgrade to the TM4100GAD8-80 and experience the difference today!

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape allows for efficient packaging and stacking of multiple modules, saving space in the system.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent control of memory access, providing flexibility in data retrieval and processing.

Self Refresh: YES

Self-refresh capability helps in conserving power by automatically refreshing the memory cells without requiring external intervention.

Input/Output Type: COMMON

Common input/output type simplifies the interface design and compatibility with other components in the system.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage of 5V, ensuring compatibility with most systems and power sources.

No. of Terminals: 30

A moderate number of terminals for efficient connectivity and communication within the memory module.

Organization: 4MX8

Organized as 4 Megabytes x 8 bits, providing a balance between storage capacity and data transfer speed.

Output Characteristics: 3-STATE

3-state output allows for high impedance state, enabling multiple memory modules to share a common data bus without interference.

Access Mode: FAST PAGE

Fast page access mode enhances the memory access speed by allowing rapid retrieval of contiguous data blocks.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with various system logic levels.

Maximum Operating Temperature: 70 °C

Capable of operating reliably at up to 70°C, ensuring stability under normal operating conditions.

Technical Specifications

DRAM TM4100GAD8-80 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

80 ns

Additional Features:

AUTO/SELF REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N30

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

30

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX8

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SIM30

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

20.447 mm

Self Refresh:

YES

Maximum Standby Current:

.008 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

640 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Trade Compliance

TM4100GAD8-80 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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