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TM4100EBD9-10

Texas Instruments

TM4100EBD9-10 by Texas Instruments

TM4100EBD9-10 by Texas Instruments is a 4MX9 DRAM module with 37748736-bit memory density. It operates at 5V, has an access time of 100ns, and uses FAST PAGE technology. Ideal for applications requiring fast data access in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,666 parts In-Stock

1+ parts

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8,666

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Digiode

USA . 2,463 parts In-Stock

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2,463

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,272 parts In-Stock

1+ parts

$2.127

100+ parts

-

1k+ parts

$2.640

10k+ parts

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1,272

$2.127

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$2.640

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DigiPath Technology Company

USA . 11 parts In-Stock

1+ parts

$2.342

100+ parts

$2.155

1k+ parts

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11

$2.342

$2.155

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ChromeModa Solutions

Germany . 4,416 parts In-Stock

1+ parts

$2.390

100+ parts

$1.960

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4,416

$2.390

$1.960

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IDEA Electronic Components Group

UK . 1,470 parts In-Stock

1+ parts

$2.390

100+ parts

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1k+ parts

$2.151

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1,470

$2.390

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$2.151

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AZTECH Wire

Italy . 275 parts In-Stock

1+ parts

$10.988

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275

$10.988

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One Stop Electronics

USA . 1,529 parts In-Stock

1+ parts

$13.000

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1,529

$13.000

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Corphita

USA . 3,032 parts In-Stock

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3,032

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Overview

Experience superior performance and reliability with the TM4100EBD9-10 by Texas Instruments. As a leader in the industry, Texas Instruments ensures top-notch quality and innovation in every product they create. This DRAM module is perfect for various applications, offering fast page access mode and 3-state output characteristics. Enjoy the benefits of high memory density, low standby current, and quick access time. Trust Texas Instruments for cutting-edge technology that delivers exceptional value and efficiency to meet all your memory needs.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for efficient integration into various electronic devices and systems.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility and ease of use in data transfer and processing.

Input/Output Type: COMMON

Common input/output type simplifies connectivity and compatibility with other components.

Nominal Supply Voltage: 5V

Stable 5V supply voltage ensures reliable performance and power efficiency.

No. of Terminals: 30

30 terminals allow for versatile connectivity options and easy integration into circuitry.

Maximum Operating Temperature: 70 °C

High maximum operating temperature tolerance ensures durability and reliability in various environments.

Organization: 4MX9

Organized in a 4MX9 configuration for efficient memory storage and retrieval.

Output Characteristics: 3-STATE

3-STATE output characteristics provide flexibility in controlling the output signal.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature tolerance ensures functionality in various operating environments.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection.

Maximum Seated Height: 23.114 mm

Compact maximum seated height allows for space-efficient integration in devices.

Minimum Supply Voltage: 4.5 V

Low minimum supply voltage requirement ensures compatibility with various power sources.

Temperature Grade: COMMERCIAL

Commercial temperature grade suitable for standard operating conditions.

Access Mode: FAST PAGE

Fast page access mode enables quick data retrieval and processing.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation.

Terminal Form: NO LEAD

No lead terminal form for environmentally friendly and efficient design.

Maximum Supply Current: 585 mA

Maximum supply current of 585 mA ensures stable power delivery for optimal operation.

No. of Words: 4194304 words

Large number of words allows for extensive data storage and processing capabilities.

Memory Width: 9

Memory width of 9 bits provides efficient data handling and storage.

Terminal Pitch: 2.54 mm

Terminal pitch of 2.54 mm facilitates easy installation and connection with other components.

No. of Words Code: 4M

Words code of 4M indicates high memory capacity for storage and processing needs.

Maximum Supply Voltage: 5.5 V

Maximum supply voltage of 5.5V ensures safe operation within specified voltage range.

Memory Density: 37748736 bit

High memory density of 37748736 bits allows for extensive data storage and processing capabilities.

Memory IC Type: FAST PAGE DRAM MODULE

Fast page DRAM module provides quick access to stored data for efficient processing.

Maximum Standby Current: 0.009 Amp

Low maximum standby current of 0.009 Amp ensures energy efficiency during idle periods.

Refresh Cycles: 1024

1024 refresh cycles ensure data integrity and reliability over extended periods of use.

Maximum Access Time: 100 ns

Low maximum access time of 100 ns enables fast data retrieval and processing for enhanced performance.

Technical Specifications

DRAM TM4100EBD9-10 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

100 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N30

Memory Density:

37748736 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

30

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX9

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SIM30

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

23.114 mm

Maximum Standby Current:

.009 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

585 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

2.54 mm

Terminal Position:

SINGLE

Trade Compliance

TM4100EBD9-10 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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