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TCI6630K2LCMSA2

Texas Instruments

TCI6630K2LCMSA2 by Texas Instruments

TCI6630K2LCMSA2 by Texas Instruments is a CMOS microprocessor circuit with 900 terminals in a grid array package. It operates b/w 0.902V to 0.997V and can withstand peak reflow temperature of 245°C for up to 30s. Ideal for high-performance computing applications requiring advanced processing capabilities.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

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Digiode

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Nova Conductors

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Ampacity Inc.

Singapore . 126 parts In-Stock

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$5.000

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AZTECH Wire

Italy . 458 parts In-Stock

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One Stop Electronics

USA . 915 parts In-Stock

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Parana Technologies

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DigiPath Technology Company

USA . 861 parts In-Stock

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ChromeModa Solutions

Germany . 5,797 parts In-Stock

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IDEA Electronic Components Group

UK . 744 parts In-Stock

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Corohmni

South Africa . 113 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Experience advanced technology with the TCI6630K2LCMSA2 by Texas Instruments, a top-tier manufacturer known for its cutting-edge solutions. This microprocessor circuit offers unparalleled performance and reliability in a compact grid array package. Perfect for a variety of applications, this product provides customers with exceptional value and efficiency. Upgrade your devices with the TCI6630K2LCMSA2 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product durable and resistant to external elements, increasing its lifespan.

Surface Mount: YES

The surface mount feature allows for easy installation and saves space on the circuit board, making it ideal for compact designs.

Maximum Supply Voltage: 0.997 V

The high maximum supply voltage ensures stable performance even under varying voltage conditions.

Package Shape: SQUARE

The square package shape offers uniformity and ease of handling during assembly.

No. of Terminals: 900

With a high number of terminals, this product can handle complex connections and provide versatility in circuit design.

Package Style (Meter): GRID ARRAY

The grid array package style allows for efficient heat dissipation and enhances overall performance.

Minimum Supply Voltage: 0.902 V

The low minimum supply voltage ensures energy efficiency and prevents overloading of the system.

Terminal Finish: TIN SILVER COPPER

The use of tin silver copper terminal finish enhances conductivity and resistance to corrosion for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy integration into the circuit board and ensures stable connections.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature minimizes thermal stress on the product during assembly.

Peak Reflow Temperature °C: 245

The high peak reflow temperature ensures proper soldering and bonding for secure connections.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

The integrated microprocessor circuit enhances the product's functionality and versatility for various applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product efficient and reliable.

Terminal Form: BALL

The ball terminal form allows for easy soldering and provides a strong mechanical bond for stable connections.

Nominal Supply Voltage: 0.95 V

The nominal supply voltage ensures optimal performance and efficiency for the product.

Moisture Sensitivity Level (MSL): 4

MSL 4 indicates that the product has a low sensitivity to moisture, ensuring reliability in various environmental conditions.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs TCI6630K2LCMSA2 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PBGA-B900

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

4

No. of Terminals:

900

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

245

Maximum Supply Voltage:

.997 V

Minimum Supply Voltage:

.902 V

Nominal Supply Voltage:

.95 V

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Peripheral IC Type:

Trade Compliance

TCI6630K2LCMSA2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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