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DRA784BSGABFQ1

Texas Instruments

DRA784BSGABFQ1 by Texas Instruments

DRA784BSGABFQ1 by Texas Instruments is a MICROPROCESSOR CIRCUIT with 32-bit External Data Bus Width, operating at 32 MHz clock frequency. Ideal for automotive applications, it features a max supply voltage of 1.11 V and can withstand temperatures from -40 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,652 parts In-Stock

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Digiode

USA . 278 parts In-Stock

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Native Components

USA . 7 parts In-Stock

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$0.745

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7

$0.745

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Northwest PG Solutions

USA . 1,039 parts In-Stock

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$0.820

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AZTECH Wire

Italy . 544 parts In-Stock

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$7.844

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One Stop Electronics

USA . 743 parts In-Stock

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$18.000

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Parana Technologies

USA . 44 parts In-Stock

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$45.209

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DigiPath Technology Company

USA . 2,185 parts In-Stock

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$49.781

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$45.799

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ChromeModa Solutions

Germany . 6,599 parts In-Stock

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$50.797

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$41.654

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IDEA Electronic Components Group

UK . 2,060 parts In-Stock

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$50.797

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$48.257

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$45.717

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Corohmni

South Africa . 312 parts In-Stock

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$79.322

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Corphita

USA . 4,380 parts In-Stock

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Overview

Unlock the potential of your automotive applications with the DRA784BSGABFQ1 by Texas Instruments. This cutting-edge MICROPROCESSOR CIRCUIT offers unparalleled quality and reliability, thanks to its AEC-Q100 screening level and innovative CMOS technology. With a wide range of bus compatibility options, including I2C, SPI, and UART, this product provides seamless integration for your project. Experience the benefits of top-notch performance and efficiency with Texas Instruments' state-of-the-art solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the components inside, making the product long-lasting and reliable.

Surface Mount: YES

Surface mounting allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 1.11 V

The high maximum supply voltage ensures stability and reliability of the product under varying operating conditions.

Screening Level: AEC-Q100

AEC-Q100 screening ensures that the product meets automotive industry standards for reliability and performance, making it suitable for automotive applications.

No. of Terminals: 367

The large number of terminals allow for versatile connectivity options, enabling the product to interface with a wide range of devices and systems.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures that the product can function optimally even in environments with elevated temperatures.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the product to operate efficiently in cold environments without compromising performance.

Terminal Finish: TIN SILVER COPPER

This finish provides corrosion resistance and reliable electrical connections, ensuring stable performance over time.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

The inclusion of a microprocessor circuit enhances the product's processing capabilities and functionality, making it suitable for a wide range of applications.

Technology: CMOS

CMOS technology offers low power consumption and high speed operations, making the product energy-efficient and fast.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA784BSGABFQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bus Compatibility:

I2C(2), SPI(4), UART(3),

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

32

JESD-30 Code:

S-PBGA-B367

JESD-609 Code:

e1

Length:

15 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

367

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA167,22X22,26

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Maximum Seated Height:

2.82 mm

Maximum Supply Voltage:

1.11 V

Minimum Supply Voltage:

1.02 V

Nominal Supply Voltage:

1.06 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

15 mm

Peripheral IC Type:

Trade Compliance

DRA784BSGABFQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.1

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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