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NOIV1SN5000A-QDC

Onsemi

NOIV1SN5000A-QDC by Onsemi

NOIV1SN5000A-QDC by Onsemi features 4.80X4.80 um pixel size, 62 MHz master clock, and 2592 horizontal pixels. Ideal for image sensing applications with a frame rate of 75 fps and CMOS sensor technology.

Median Price

$596.740

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Rochester

USA . 43 parts In-Stock

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$596.740

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$584.860

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$572.930

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Digiode

USA . 2,085 parts In-Stock

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$566.903

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Vyrian

USA . 4,816 parts In-Stock

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Flip Electronics

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ComSIT Distribution GmbH

Germany . 1 parts In-Stock

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ComSIT USA

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AZTECH Wire

Italy . 517 parts In-Stock

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$20.120

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Corphita

USA . 2,415 parts In-Stock

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$537.066

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Corohmni

South Africa . 234 parts In-Stock

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Problanco Electronics

Mexico . 7,060 parts In-Stock

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TANS Electronics

Latvia . 6,340 parts In-Stock

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Kulean Microsystems

USA . 5,267 parts In-Stock

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SupplyDigital Components

Austria . 3,438 parts In-Stock

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UHIMA Technologies

Türkiye . 871 parts In-Stock

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Perfect Parts

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Overview

Discover the cutting-edge NOIV1SN5000A-QDC image sensor by Onsemi, setting new standards in quality and innovation. Designed for a wide range of applications, this sensor offers unmatched precision and clarity in capturing images. With its advanced technology and superior performance, this product delivers exceptional value and benefits to customers looking to elevate their imaging solutions. Experience the difference with Onsemi's industry-leading image sensors.

Feature Benefit Bullets

Pixel Size (um) 4.80X4.80

Smaller pixel size allows for higher resolution images with finer details.

Maximum Supply Voltage 2 V

Low maximum supply voltage helps in reducing power consumption and extends battery life.

Master Clock 62 MHz

High master clock frequency enables fast data readout and processing.

Body Width 24.13 inch

Compact body width makes it suitable for integration in smaller devices or systems.

Power Supplies (V) 3.3

Stable power supply at 3.3V ensures reliable operation and performance.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS image sensor technology offers high-quality image output with low power consumption.

Body Height 2.71 mm

Low body height allows for slim design and easy integration into various applications.

Package Shape or Style SQUARE

Square package shape provides uniformity and ease of mounting in electronic systems.

Minimum Supply Voltage 1.6 V

Low minimum supply voltage provides flexibility in power options and efficiency.

Maximum Operating Temperature 70 °C

Wide operating temperature range allows for use in various environments and conditions.

Horizontal Pixel 2592

High horizontal pixel count ensures detailed and sharp images.

Minimum Operating Temperature 0 °C

Operational at 0 °C ensures performance even in colder environments.

Maximum Operating Current 115 mA

Low operating current helps in reducing power consumption and heat dissipation.

Housing CERAMIC

Durable ceramic housing provides protection and reliability for long-term use.

Dynamic Range 53 dB

Wide dynamic range allows for capturing both bright and dark areas in the image with detail.

Vertical Pixel 2048

High vertical pixel count enhances image resolution and quality.

Body Length/Diameter 24.13 mm

Compact body length or diameter for easy integration and space-saving designs.

Termination Type SOLDER

Solder termination ensures secure connection and reliability in electronic assemblies.

Output Interface Type 4-WIRE INTERFACE

4-wire interface enables easy connectivity and data transfer with other devices or systems.

Frame Rate 75 fps

High frame rate of 75 fps allows for smooth and real-time image capture.

Array Type FRAME

Frame array type offers organized and efficient image capture and processing.

Mounting Feature SURFACE MOUNT

Surface mount capability simplifies the installation process and ensures secure mounting.

Technical Specifications

Image Sensors NOIV1SN5000A-QDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE SUPPLY VOLTAGE 3.0 TO 3.6 V, ALSO CURRENT CONSUMPTION 235 MA, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

24.13 inch

Body Height:

2.71 mm

Body Length/Diameter:

24.13 mm

Dynamic Range:

53 dB

Frame Rate:

75 fps

Horizontal Pixel:

2592

Housing:

CERAMIC

Master Clock:

62 MHz

Mounting Feature:

Maximum Operating Current:

115 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

2048

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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