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NGB8206NTF4G

Onsemi

NGB8206NTF4G by Onsemi

NGB8206NTF4G by Onsemi is an N-CHANNEL IGBT with a built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 390V, collector current of 20A, and turn-off time of 18.5μs. This surface-mount transistor operates at up to 175 °C temperature with a gull wing terminal form.

Median Price

$1.390

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 12,600 parts In-Stock

1+ parts

-

100+ parts

$1.390

1k+ parts

$1.150

10k+ parts

$1.030

12,600

-

$1.390

$1.150

$1.030

DigiKey

USA . 12,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.190

10k+ parts

$1.190

12,600

-

-

$1.190

$1.190

Verical

USA . 11,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.438

10k+ parts

$1.288

11,900

-

-

$1.438

$1.288

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 488 parts In-Stock

1+ parts

$0.943

100+ parts

-

1k+ parts

-

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-

488

$0.943

-

-

-

Digiode

USA . 853 parts In-Stock

1+ parts

$1.083

100+ parts

-

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-

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853

$1.083

-

-

-

DigiKey Marketplace

USA . 12,600 parts In-Stock

1+ parts

-

100+ parts

$1.180

1k+ parts

-

10k+ parts

-

12,600

-

$1.180

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 469 parts In-Stock

1+ parts

$0.943

100+ parts

-

1k+ parts

-

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-

469

$0.943

-

-

-

Corphita

USA . 285 parts In-Stock

1+ parts

$1.026

100+ parts

-

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-

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-

285

$1.026

-

-

-

Component Stockers USA

USA . 22,176 parts In-Stock

1+ parts

$1.170

100+ parts

$1.100

1k+ parts

$1.000

10k+ parts

$1.000

22,176

$1.170

$1.100

$1.000

$1.000

Continental Prestige Electronics

USA . 12,600 parts In-Stock

1+ parts

-

100+ parts

$0.915

1k+ parts

-

10k+ parts

-

12,600

-

$0.915

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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100+ parts

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10,000

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Problanco Electronics

Mexico . 8,308 parts In-Stock

1+ parts

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8,308

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TANS Electronics

Latvia . 8,007 parts In-Stock

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8,007

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SupplyDigital Components

Austria . 6,485 parts In-Stock

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6,485

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Kulean Microsystems

USA . 6,452 parts In-Stock

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6,452

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Microchip USA

USA . 5,902 parts In-Stock

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5,902

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A-Z Elektronik GmbH

Germany . 5,175 parts In-Stock

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5,175

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UHIMA Technologies

Türkiye . 598 parts In-Stock

1+ parts

-

100+ parts

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598

-

-

-

-

Overview

Enhance your automotive ignition systems with the NGB8206NTF4G Insulated Gate Bipolar Transistor by Onsemi. Engineered with precision and reliability, this N-Channel transistor features a built-in diode and resistor in a compact rectangular package for easy surface mounting. With a high collector current of 20A and a maximum operating temperature of 175 °C, this transistor ensures optimal performance and longevity in your vehicle applications. Trust Onsemi's expertise and elevate your automotive electronics with the NGB8206NTF4G. Drive with confidence knowing you have a premium quality component powering your ignition system.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their high efficiency and speed, making them suitable for a variety of high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and reduce component count, saving space and cost.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, ensuring reliable performance and efficient operation in automotive applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, making the product suitable for automated manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape is convenient for mounting and placement on PCBs, optimizing space utilization.

Nominal Turn Off Time (toff): 18500 ns

Fast turn-off time enhances efficiency and performance, reducing power loss and improving overall system reliability.

No. of Terminals: 2

Simple 2-terminal configuration simplifies circuit design and connection, making installation easier.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable operation in automotive environments where temperature fluctuations are common.

Maximum Collector-Emitter Voltage: 390 V

High voltage rating ensures compatibility with a wide range of applications, providing flexibility and versatility.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and performance, ensuring long-term stability and durability.

Maximum Collector Current (IC): 20 A

High collector current rating allows for handling high power levels, making the product suitable for demanding automotive ignition systems.

Terminal Finish: TIN

Tin terminal finish ensures good solderability and reliable electrical connections, enhancing overall product quality and performance.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, reducing the chance of errors and ensuring consistent performance.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and thermal management, improving overall reliability and efficiency.

Nominal Turn On Time (ton): 6500 ns

Fast turn-on time enhances responsiveness and efficiency, making the product suitable for high-speed automotive ignition systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGB8206NTF4G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

390 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

18500 ns

Nominal Turn On Time (ton):

6500 ns

Trade Compliance

NGB8206NTF4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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