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NGB8206NSL3

Onsemi

NGB8206NSL3 by Onsemi

NGB8206NSL3 by Onsemi is an N-CHANNEL IGBT with PLASTIC/EPOXY body, designed for AUTOMOTIVE IGNITION. Features include 390V max collector-emitter voltage, 20A max collector current, and built-in diode and resistor. It has a turn-off time of 18500ns and turn-on time of 6500ns, making it suitable for automotive applications.

Median Price

$0.617

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,350 parts In-Stock

1+ parts

-

100+ parts

$0.595

1k+ parts

$0.493

10k+ parts

$0.440

3,350

-

$0.595

$0.493

$0.440

DigiKey

USA . 3,350 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.740

10k+ parts

-

3,350

-

-

$0.740

-

Verical

USA . 1,750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.617

10k+ parts

-

1,750

-

-

$0.617

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 123 parts In-Stock

1+ parts

$0.395

100+ parts

-

1k+ parts

-

10k+ parts

-

123

$0.395

-

-

-

Digiode

USA . 1,137 parts In-Stock

1+ parts

$0.463

100+ parts

-

1k+ parts

-

10k+ parts

-

1,137

$0.463

-

-

-

DigiKey Marketplace

USA . 3,350 parts In-Stock

1+ parts

-

100+ parts

$0.510

1k+ parts

-

10k+ parts

-

3,350

-

$0.510

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 141 parts In-Stock

1+ parts

$0.395

100+ parts

-

1k+ parts

-

10k+ parts

-

141

$0.395

-

-

-

Corphita

USA . 2,197 parts In-Stock

1+ parts

$0.438

100+ parts

-

1k+ parts

-

10k+ parts

-

2,197

$0.438

-

-

-

Component Stockers USA

USA . 2,275 parts In-Stock

1+ parts

$0.510

100+ parts

$0.480

1k+ parts

$0.430

10k+ parts

-

2,275

$0.510

$0.480

$0.430

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

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SupplyDigital Components

Austria . 8,240 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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8,240

-

-

-

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Kulean Microsystems

USA . 6,934 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,934

-

-

-

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Problanco Electronics

Mexico . 4,869 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,869

-

-

-

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Continental Prestige Electronics

USA . 3,350 parts In-Stock

1+ parts

-

100+ parts

$0.395

1k+ parts

-

10k+ parts

-

3,350

-

$0.395

-

-

TANS Electronics

Latvia . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,000

-

-

-

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UHIMA Technologies

Türkiye . 844 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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844

-

-

-

-

Overview

Experience the superior quality and reliability of the NGB8206NSL3 by Onsemi, a leading manufacturer in the industry. This Insulated Gate Bipolar Transistor (IGBT) is perfect for automotive ignition applications, offering a single configuration with built-in diode and resistor. With a maximum collector-emitter voltage of 390V and a nominal turn off time of 18500ns, this product ensures optimal performance and efficiency. Trust Onsemi to deliver cutting-edge technology that meets your needs, providing value and benefits that exceed expectations. Upgrade your automotive systems with the NGB8206NSL3 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides lightweight and durable housing for the transistor, ideal for automotive applications where weight and strength are important.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower on-state voltage drop and higher efficiency compared to P-Channel, making them ideal for high-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Built-in diode and resistor simplifies circuit design and saves space on the PCB, while also improving overall reliability of the system.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, ensuring reliable performance under high temperature and harsh environments.

Surface Mount: YES

Enables easy and efficient PCB assembly, making it suitable for automated manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on the PCB, enabling compact and space-saving designs.

Nominal Turn Off Time (toff): 18500 ns

Fast turn-off time reduces switching losses and improves overall efficiency of the system.

No. of Terminals: 2

Simplifies the connection process and reduces the chances of wiring errors, enhancing ease of use.

Maximum Collector-Emitter Voltage: 390 V

High voltage capability allows for use in a wide range of applications, providing flexibility and versatility.

Transistor Element Material: SILICON

Silicon-based IGBTs offer high switching speeds, low on-state voltage drop, and high thermal conductivity, making them reliable and efficient.

Maximum Collector Current (IC): 20 A

High collector current rating enables the transistor to handle high power loads, suitable for automotive ignition systems.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability, ensuring reliable and robust electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies board layout and assembly, reducing complexity and improving reliability.

Case Connection: COLLECTOR

Collector connection provides a secure and efficient path for current flow, enhancing the overall performance and reliability of the transistor.

Nominal Turn On Time (ton): 6500 ns

Fast turn-on time allows for quick response in switching applications, contributing to high efficiency and performance of the system.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGB8206NSL3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

390 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

18500 ns

Nominal Turn On Time (ton):

6500 ns

Trade Compliance

NGB8206NSL3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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