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NGB8204ANT4G

Onsemi

NGB8204ANT4G by Onsemi

NGB8204ANT4G by Onsemi is an N-CHANNEL IGBT with 7000 ns rise time, 15000 ns fall time, and 115 W power dissipation. Ideal for applications requiring a max collector-emitter voltage of 430 V, such as power supplies and motor control systems.

Median Price

$0.846

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,100 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.720

10k+ parts

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1,100

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-

$0.720

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Rochester

USA . 1,095 parts In-Stock

1+ parts

-

100+ parts

$0.846

1k+ parts

$0.702

10k+ parts

$0.626

1,095

-

$0.846

$0.702

$0.626

Verical

USA . 795 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.877

10k+ parts

$0.782

795

-

-

$0.877

$0.782

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,454 parts In-Stock

1+ parts

$0.558

100+ parts

-

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2,454

$0.558

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Digiode

USA . 2,445 parts In-Stock

1+ parts

$0.658

100+ parts

-

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2,445

$0.658

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DigiKey Marketplace

USA . 1,100 parts In-Stock

1+ parts

-

100+ parts

$0.720

1k+ parts

-

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1,100

-

$0.720

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 368 parts In-Stock

1+ parts

$0.558

100+ parts

-

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368

$0.558

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Corphita

USA . 2,285 parts In-Stock

1+ parts

$0.624

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2,285

$0.624

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Component Stockers USA

USA . 1,058 parts In-Stock

1+ parts

$0.700

100+ parts

$0.660

1k+ parts

$0.600

10k+ parts

-

1,058

$0.700

$0.660

$0.600

-

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$2.187

100+ parts

$1.990

1k+ parts

$1.793

10k+ parts

-

3,000

$2.187

$1.990

$1.793

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 18,775 parts In-Stock

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Kulean Microsystems

USA . 6,600 parts In-Stock

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6,600

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TANS Electronics

Latvia . 5,389 parts In-Stock

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5,389

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Microchip USA

USA . 4,084 parts In-Stock

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4,084

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Problanco Electronics

Mexico . 2,182 parts In-Stock

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SupplyDigital Components

Austria . 1,407 parts In-Stock

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1,407

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Continental Prestige Electronics

USA . 1,100 parts In-Stock

1+ parts

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100+ parts

$0.558

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1,100

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$0.558

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Perfect Parts

USA . 888 parts In-Stock

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888

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UHIMA Technologies

Türkiye . 482 parts In-Stock

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482

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Overview

Unleash the power of the NGB8204ANT4G from Onsemi, a top-of-the-line Insulated Gate Bipolar Transistor (IGBT) that offers unparalleled quality and reliability. With its N-CHANNEL design, this surface-mount transistor is perfect for a wide range of applications. Whether you're looking to enhance the performance of your electronics or improve energy efficiency, this IGBT delivers exceptional value and benefits. Trust in Onsemi's reputation for excellence and choose the NGB8204ANT4G for all your electronic needs.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high input impedance and fast switching speeds, making them suitable for high-power applications.

Surface Mount: YES

Surface mount IGBTs are easier to assemble on PCBs, saving space and reducing overall footprint of the circuit.

Maximum Rise Time (tr): 7000 ns

With a fast rise time, this IGBT can quickly turn on and handle high frequency switching applications efficiently.

Maximum Fall Time (tf): 15000 ns

The low fall time ensures quick turn-off, reducing switching losses and improving overall efficiency of the circuit.

Maximum Power Dissipation (Abs): 115 W

With a high power dissipation rating, this IGBT can handle large amounts of power without overheating, ensuring reliable operation.

Maximum Operating Temperature: 175 °C

The high operating temperature rating allows this IGBT to withstand harsh environmental conditions, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 430 V

The high collector-emitter voltage rating provides protection against voltage spikes and surges, increasing the reliability of the system.

Maximum Gate-Emitter Voltage: 18 V

The high gate-emitter voltage rating ensures reliable and robust gate control, preventing accidental turn-on or turn-off of the IGBT.

Maximum Collector Current (IC): 18 A

With a high collector current rating, this IGBT can handle high current loads, making it suitable for power electronics applications.

Maximum Gate-Emitter Threshold Voltage: 1.9 V

The low gate-emitter threshold voltage simplifies drive circuit design and allows for precise control of the IGBT, improving overall performance.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable electrical connections and long-term stability of the IGBT.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGB8204ANT4G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

430 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

1.9 V

Maximum Gate-Emitter Voltage:

18 V

JESD-609 Code:

e3

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

7000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Trade Compliance

NGB8204ANT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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