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NGB8206NSL3G

Onsemi

NGB8206NSL3G by Onsemi

NGB8206NSL3G by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 390V, collector current of 20A, and turn-off time of 18500ns. This surface-mount transistor operates at a max temperature of 175 °C in a small outline package.

Median Price

$1.564

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 225 parts In-Stock

1+ parts

-

100+ parts

$1.390

1k+ parts

$1.150

10k+ parts

$1.030

225

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$1.390

$1.150

$1.030

Verical

USA . 225 parts In-Stock

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-

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$1.738

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225

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$1.738

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Distributors (In-Stock)

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Digiode

USA . 2,238 parts In-Stock

1+ parts

$1.083

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2,238

$1.083

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Vyrian

USA . 2,600 parts In-Stock

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2,600

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Distributors (Availability)

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Corphita

USA . 451 parts In-Stock

1+ parts

$1.026

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451

$1.026

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Corohmni

South Africa . 311 parts In-Stock

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$1.140

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311

$1.140

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TANS Electronics

Latvia . 8,173 parts In-Stock

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Problanco Electronics

Mexico . 7,036 parts In-Stock

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7,036

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SupplyDigital Components

Austria . 3,189 parts In-Stock

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Kulean Microsystems

USA . 958 parts In-Stock

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958

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Continental Prestige Electronics

USA . 225 parts In-Stock

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$1.090

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$1.090

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UHIMA Technologies

Türkiye . 172 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the NGB8206NSL3G Insulated Gate Bipolar Transistor. This N-channel transistor is designed for automotive ignition applications, providing exceptional performance and efficiency. With a built-in diode and resistor, this product offers convenience and cost savings. Trust Onsemi to deliver cutting-edge technology and innovation in every component, making the NGB8206NSL3G the ideal choice for your automotive needs. Upgrade your systems today and discover the difference that Onsemi can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal and electrical insulation, making the transistor more reliable and durable.

Polarity or Channel Type: N-CHANNEL

Efficient for switching high voltages and currents in automotive ignition applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and saves space, improving overall system efficiency.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, ensuring optimal performance and reliability in this application.

Surface Mount: YES

Easy to mount on the PCB, facilitating automated assembly processes and saving time during production.

Package Shape: RECTANGULAR

Space-efficient design that allows for dense packing of components on the PCB.

Nominal Turn Off Time (toff): 18500 ns

Fast turn-off time helps in reducing power losses and improving efficiency in high-power switching applications.

No. of Terminals: 2

Simplifies circuit connectivity and reduces the chances of wiring errors during installation.

Package Style (Meter): SMALL OUTLINE

Compact package size that saves space on the PCB and allows for high-density integration.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures without compromising performance, suitable for automotive environments.

Maximum Collector-Emitter Voltage: 390 V

A high voltage rating for reliable operation in automotive ignition systems without risk of breakdown.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and efficiency in power electronics applications.

Maximum Collector Current (IC): 20 A

Capable of handling high currents, making it suitable for power switching applications in automotive systems.

Terminal Finish: MATTE TIN

Provides a reliable electrical connection and prevents oxidation of terminals, ensuring long-term performance.

Terminal Position: SINGLE

Simplifies circuit layout and installation, reducing complexity and improving reliability.

Case Connection: COLLECTOR

Enables efficient heat dissipation and ensures proper grounding for optimal performance in high-power applications.

Nominal Turn On Time (ton): 6500 ns

Fast turn-on time for quick response in switching operations, improving efficiency and reducing power losses.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGB8206NSL3G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

390 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

18500 ns

Nominal Turn On Time (ton):

6500 ns

Trade Compliance

NGB8206NSL3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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