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MT9V023IA7XTM-DR

Onsemi

MT9V023IA7XTM-DR by Onsemi

Onsemi's MT9V023IA7XTM-DR is a 1/3" CMOS image sensor with 752x480 pixels, offering a dynamic range of 110 dB. Operating at 60 fps, it features a digital voltage output interface and sensitivity of 4.8 V/lx.s. Ideal for applications requiring high-resolution imaging in varying lighting conditions.

Median Price

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Lifecycle Status

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Vyrian

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AZTECH Wire

Italy . 1,182 parts In-Stock

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SupplyDigital Components

Austria . 5,335 parts In-Stock

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TANS Electronics

Latvia . 4,074 parts In-Stock

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Corphita

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UHIMA Technologies

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Kulean Microsystems

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Problanco Electronics

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Corohmni

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Overview

Discover the Onsemi MT9V023IA7XTM-DR, a cutting-edge image sensor designed to deliver unparalleled quality and performance. Onsemi is renowned for its innovative technology and commitment to excellence, making this sensor a top choice for a wide range of applications. With a high dynamic range of 110 dB and a frame rate of 60 fps, this sensor offers exceptional value and benefits to customers seeking superior imaging solutions. Whether used in security cameras, industrial inspection systems, or medical devices, the MT9V023IA7XTM-DR ensures crisp, clear images that exceed expectations. Elevate your projects with this state-of-the-art sensor from Onsemi.

Feature Benefit Bullets

Pixel Size (um): 6X6

This small pixel size allows for high resolution image capture, making this sensor suitable for detailed imaging applications.

Maximum Supply Voltage: 3.6 V

Operating within a maximum supply voltage of 3.6V provides efficient power usage and ensures the sensor's durability.

Master Clock: 27 MHz

With a high master clock frequency of 27MHz, this sensor can capture rapid movements with precision and accuracy.

Body Width: 9 inch

The compact body width of 9 inches makes this sensor easy to integrate into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS sensors are known for their low power consumption and high image quality, making them a popular choice for imaging applications.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature of 105 °C, this sensor can withstand harsh environmental conditions and extended operation.

Minimum Supply Voltage: 3 V

Operating within a minimum supply voltage of 3V ensures that the sensor can function reliably even in low power scenarios.

Package Shape or Style: SQUARE

The square package shape makes the sensor easy to mount and align within devices, simplifying the integration process.

Horizontal Pixel: 752

With 752 horizontal pixels, this sensor can capture detailed and high-resolution images with clarity.

Output Type: DIGITAL VOLTAGE

The digital voltage output simplifies the signal processing and interpretation, resulting in accurate and reliable image data.

Minimum Operating Temperature: -40 °C

The sensor's ability to operate at temperatures as low as -40 °C makes it suitable for use in a wide range of environments.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The terminal finish of tin, silver, and copper ensures good conductivity and corrosion resistance, increasing the sensor's lifespan.

Maximum Operating Current: 60 mA

Operating within a maximum current of 60mA ensures efficient power usage and prevents overheating of the sensor.

Dynamic Range: 110 dB

With a high dynamic range of 110dB, this sensor can capture both bright and dark areas in an image with great detail and accuracy.

Vertical Pixel: 480

With 480 vertical pixels, this sensor can capture images with good depth and resolution, making it suitable for various imaging applications.

Body Length/Diameter: 9 mm

The compact body length of 9mm allows for easy integration and placement of the sensor within devices and systems.

Optical Format (inch): 1/3

The 1/3-inch optical format provides a good balance between image sensor size and image quality, making this sensor versatile for different applications.

Termination Type: SOLDER

The solder termination type ensures secure connections and reliable signal transmission, enhancing the sensor's overall performance.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies the sensor's connectivity and allows for easy integration with other components and systems.

Frame Rate: 60 fps

With a high frame rate of 60fps, this sensor can capture fast-moving objects and scenes with smooth and detailed motion rendering.

Array Type: FRAME

The frame array type enables the sensor to capture images in a sequential manner, ensuring high-quality image output and data processing.

Sensitivity (V/lx.s): 4.8 V/lx.s

With a sensitivity of 4.8V/lx.s, this sensor can capture images with accurate light representation and excellent color reproduction.

Mounting Feature: SURFACE MOUNT

The surface mount feature allows for easy and secure mounting of the sensor onto PCBs or other surfaces, enhancing its stability and reliability.

Technical Specifications

Image Sensors MT9V023IA7XTM-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

110 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensitivity (V/lx.s):

4.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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