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MT9V023IA7XTC-DP

Onsemi

MT9V023IA7XTC-DP by Onsemi

Onsemi's MT9V023IA7XTC-DP image sensor features 6x6 um pixel size, 27 MHz master clock, and 752 (H) x 480 (V) resolution. Ideal for applications requiring high sensitivity and a wide dynamic range in a compact square package.

Median Price

$22.030

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9 parts In-Stock

1+ parts

-

100+ parts

$22.030

1k+ parts

$19.710

10k+ parts

$18.550

9

-

$22.030

$19.710

$18.550

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 315 parts In-Stock

1+ parts

$23.313

100+ parts

-

1k+ parts

-

10k+ parts

-

315

$23.313

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-

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Vyrian

USA . 5,656 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,656

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 837 parts In-Stock

1+ parts

$17.180

100+ parts

-

1k+ parts

-

10k+ parts

-

837

$17.180

-

-

-

Corphita

USA . 1,534 parts In-Stock

1+ parts

$22.086

100+ parts

-

1k+ parts

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10k+ parts

-

1,534

$22.086

-

-

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Corohmni

South Africa . 441 parts In-Stock

1+ parts

$24.540

100+ parts

-

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441

$24.540

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-

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Problanco Electronics

Mexico . 4,829 parts In-Stock

1+ parts

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4,829

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SupplyDigital Components

Austria . 3,910 parts In-Stock

1+ parts

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3,910

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Kulean Microsystems

USA . 3,248 parts In-Stock

1+ parts

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3,248

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TANS Electronics

Latvia . 1,324 parts In-Stock

1+ parts

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1,324

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UHIMA Technologies

Türkiye . 805 parts In-Stock

1+ parts

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805

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Overview

Discover the cutting-edge MT9V023IA7XTC-DP image sensor by Onsemi, setting a new standard in quality and performance. Perfect for a wide range of applications, this sensor offers unparalleled value with its high-resolution imaging capabilities and advanced features. With Onsemi's reputation for excellence in manufacturing, you can trust that this sensor will exceed your expectations. Elevate your projects and unlock endless possibilities with the MT9V023IA7XTC-DP image sensor.

Feature Benefit Bullets

Pixel Size (um): 6X6

The small pixel size allows for high resolution image capture and detailed images.

Maximum Supply Voltage: 3.6 V

Provides a wide voltage range for versatile compatibility with different systems.

Master Clock: 27 MHz

High master clock frequency enables fast image processing and high frame rates.

Body Width: 9 inch

Compact body width allows for easy integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology offers low power consumption and high sensitivity for quality image capture.

Package Shape or Style: SQUARE

Square package shape provides efficient use of space and easy mounting on PCBs.

Minimum Supply Voltage: 3 V

Low minimum supply voltage ensures energy efficiency and compatibility with various power sources.

Maximum Operating Temperature: 105 °C

Wide temperature range allows for operation in various environments without risk of damage.

Horizontal Pixel: 752

High horizontal pixel count enables wide image capture and detailed horizontal resolution.

Output Range: 0.30-3V

Wide output range allows for flexibility in signal output and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital voltage output ensures accurate and reliable signal transmission for image data.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in cold environments without loss of functionality.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Multiple terminal finish options provide flexibility for different soldering processes and reliability in connections.

Maximum Operating Current: 60 mA

Low operating current ensures energy efficiency and prevents overheating during operation.

Dynamic Range: 110 dB

High dynamic range enables accurate capture of both bright and dark areas in an image for better overall image quality.

Vertical Pixel: 480

Vertical pixel count provides sufficient image height for capturing detailed vertical resolution.

Body Length/Diameter: 9 mm

Compact body length allows for easy integration into devices with limited space.

Optical Format (inch): 1/3

1/3 inch optical format provides good balance between sensor size and performance for various applications.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections for long-term use.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface allows for easy communication with other devices and systems for data transfer.

Frame Rate: 60 fps

High frame rate enables smooth and fluid motion capture for video recording or fast-moving subjects.

Array Type: FRAME

Frame array type provides organized and structured image data for processing and analysis.

Sensitivity (V/lx.s): 4.8 V/lx.s

High sensitivity allows for accurate image capture in low light conditions or fast-moving subjects.

Mounting Feature: SURFACE MOUNT

Surface mount feature allows for easy and secure mounting on PCBs for streamlined manufacturing processes.

Technical Specifications

Image Sensors MT9V023IA7XTC-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

110 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensitivity (V/lx.s):

4.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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