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AR0140AT2C00XUEA0-DRBR

Onsemi

AR0140AT2C00XUEA0-DRBR by Onsemi

Onsemi's AR0140AT2C00XUEA0-DRBR image sensor features 3x3 um pixel size, 50 MHz master clock, and 96 dB dynamic range. Ideal for applications requiring a high-resolution digital voltage output interface, such as surveillance cameras and automotive vision systems.

Median Price

$2.800

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 348 parts In-Stock

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$2.800

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$2.800

Flip Electronics (Authorized)

USA . 348 parts In-Stock

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348

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Distributors (In-Stock)

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Vyrian

USA . 8,254 parts In-Stock

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Flip Electronics

USA . 348 parts In-Stock

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348

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Digiode

USA . 211 parts In-Stock

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211

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Corohmni

South Africa . 199 parts In-Stock

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$2.800

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Problanco Electronics

Mexico . 8,364 parts In-Stock

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TANS Electronics

Latvia . 7,073 parts In-Stock

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Kulean Microsystems

USA . 3,445 parts In-Stock

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SupplyDigital Components

Austria . 2,693 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Corphita

USA . 1,658 parts In-Stock

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Northwest PG Solutions

USA . 1,407 parts In-Stock

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UHIMA Technologies

Türkiye . 655 parts In-Stock

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Native Components

USA . 46 parts In-Stock

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Overview

Capture every moment with the AR0140AT2C00XUEA0-DRBR image sensor by Onsemi. Known for its superior quality and reliability, Onsemi is a trusted manufacturer in the industry. Ideal for applications such as security cameras, automotive cameras, and industrial imaging, this image sensor offers unparalleled value with its high resolution and dynamic range. Experience crystal-clear images and seamless performance with the AR0140AT2C00XUEA0-DRBR, setting a new standard for image sensors.

Feature Benefit Bullets

Pixel Size (um) - 3X3

Smaller pixel size allows for higher resolution, making this image sensor ideal for capturing detailed images.

Maximum Supply Voltage - 1.95 V

Higher maximum supply voltage ensures stable operation and performance under various power conditions.

Master Clock - 50 MHz

High master clock frequency enables fast data readout and processing, resulting in quick image capture and transfer.

Body Width - 9 inch

Compact body width makes this image sensor suitable for integration into small devices or camera modules.

Sensors or Transducers Type - IMAGE SENSOR, CMOS

CMOS technology provides high sensitivity and low noise, leading to high-quality image output.

Package Shape or Style - SQUARE

Square package shape allows for easy and secure mounting onto PCBs, ensuring reliable connections.

Minimum Supply Voltage - 1.7 V

Low minimum supply voltage helps in reducing power consumption and extending battery life in portable devices.

Maximum Operating Temperature - 105 °C

Wide operating temperature range ensures the image sensor can perform reliably in various environmental conditions.

Horizontal Pixel - 1280

Higher number of horizontal pixels results in finer image details and better overall image quality.

Output Range - 0.40-1.50V

Wide output range allows for flexible signal processing and compatibility with different interface standards.

Output Type - DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and integration with digital devices or systems.

Minimum Operating Temperature - -40 °C

Low minimum operating temperature ensures the image sensor remains functional in cold environments or during temperature fluctuations.

Terminal Finish - Tin/Silver/Copper (Sn/Ag/Cu)

High-quality terminal finish ensures reliable electrical connections and long-term performance of the image sensor.

Maximum Operating Current - 170 mA

Moderate operating current consumption allows for efficient power usage and helps in preventing overheating issues.

Dynamic Range - 96 dB

Wide dynamic range enables the image sensor to capture both bright and dark areas in a scene with detail and accuracy.

Vertical Pixel - 800

Adequate number of vertical pixels ensures good image resolution and fidelity for various imaging applications.

Body Length/Diameter - 9 mm

Compact body length or diameter makes the image sensor suitable for space-constrained designs and applications.

Optical Format (inch) - 1/4

1/4 inch optical format is commonly used in consumer-grade cameras, making this image sensor compatible with a wide range of optics and lenses.

Termination Type - SOLDER

Solder termination ensures a secure and durable connection between the image sensor and the PCB, enhancing overall product reliability.

Output Interface Type - 2-WIRE INTERFACE

2-Wire interface simplifies the connectivity and communication between the image sensor and the control system, making integration easier.

Frame Rate - 60 fps

High frame rate allows for smooth and fluid video capture, making this image sensor suitable for applications requiring fast motion recording.

Array Type - LINEAR

Linear array type is suitable for scanning applications and helps in capturing images with uniform resolution across the entire frame.

Mounting Feature - SURFACE MOUNT

Surface mount capability simplifies the assembly process and enables easy integration of the image sensor onto PCBs or other surfaces.

Technical Specifications

Image Sensors AR0140AT2C00XUEA0-DRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.5 TO 3.1 V ANALOG SUPPLY VOLTAGE

Array Type:

LINEAR

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Dynamic Range:

96 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

170 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

800

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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