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AR0134CSSM25SUEA0-TPBR

Onsemi

AR0134CSSM25SUEA0-TPBR by Onsemi

AR0134CSSM25SUEA0-TPBR by Onsemi is a 1/3 inch CMOS image sensor with 1280x960 resolution, 3.75um pixel size, and 64dB dynamic range. It operates at -30 to 70 °C, with a max supply voltage of 1.95V and a master clock of 50MHz. Ideal for applications requiring high-resolution imaging in varying temperature conditions.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

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AZTECH Wire

Italy . 853 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 4,390 parts In-Stock

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Northwest PG Solutions

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Problanco Electronics

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UHIMA Technologies

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Corohmni

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Kulean Microsystems

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Overview

Enhance your imaging projects with the AR0134CSSM25SUEA0-TPBR image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. Ideal for a wide range of applications, this image sensor offers superior performance and precision without compromising on value. With its advanced features and cutting-edge technology, customers can expect nothing but the best in image capture and processing. Upgrade your imaging solutions today with the AR0134CSSM25SUEA0-TPBR and experience the difference that Onsemi brings to the table.

Feature Benefit Bullets

Pixel Size (um): 3.75

Smaller pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage: 1.95 V

Higher maximum supply voltage ensures stable and consistent performance of the image sensor.

Master Clock: 50 MHz

Fast master clock speed enables quick and efficient operation of the image sensor.

Body Width: 9 inch

Compact body width makes the image sensor suitable for integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS sensor type offers low power consumption and high image quality, making it a reliable choice for imaging applications.

Body Height: 1.4 mm

Slim body height allows for easy integration and placement of the image sensor.

Package Shape or Style: SQUARE

Square package shape provides a convenient and uniform form factor for mounting and installation.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures energy efficiency and extended battery life in portable devices.

Maximum Operating Temperature: 70 °C

High maximum operating temperature allows the image sensor to withstand challenging environmental conditions.

Horizontal Pixel: 1280

High horizontal pixel count enables capturing wide and detailed images with clarity.

Output Range: -22-22mA

Wide output range provides flexibility in signal transmission and processing.

Output Type: DIGITAL CURRENT

Digital current output type ensures accurate and reliable data transmission from the image sensor.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature allows the image sensor to function effectively in cold environments.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Durable terminal finish ensures secure connections and longevity of the image sensor.

Maximum Operating Current: 60 mA

High maximum operating current supports the sensor in handling complex imaging tasks efficiently.

Dynamic Range: 64 dB

Wide dynamic range allows the sensor to capture both bright and dark areas accurately in the same image.

Vertical Pixel: 960

Vertical pixel count complements the horizontal resolution for capturing high-quality images with balanced aspect ratios.

Body Length/Diameter: 9 mm

Compact body length/diameter ensures the image sensor can fit into tight spaces or slim devices.

Optical Format (inch): 1/3

Common optical format that is widely supported and compatible with various imaging systems.

Data Rate: 700 Mbps

High data rate enables fast and efficient transfer of image data for real-time processing and analysis.

Termination Type: SOLDER

Solder termination provides a reliable and secure connection for the image sensor.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with external devices or systems.

Frame Rate: 60 fps

High frame rate ensures smooth and fluid motion capture for video recording or live imaging applications.

Array Type: SINGLE FRAME

Single frame array design simplifies image processing and reduces complexity in data handling.

Mounting Feature: SURFACE MOUNT

Surface mount capability allows for easy and secure attachment of the image sensor to PCBs or mounting surfaces.

Technical Specifications

Image Sensors AR0134CSSM25SUEA0-TPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1V

Array Type:

SINGLE FRAME

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Data Rate:

700 Mbps

Dynamic Range:

64 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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