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82S129/BFA

NXP Semiconductors

82S129/BFA by NXP Semiconductors

82S129/BFA by NXP Semiconductors is a military-grade OTP ROM with a 256x4 organization and operates asynchronously. It features a ceramic, metal-sealed flatpack package, supporting a supply voltage of 4.5-5.5V and max access time of 60ns. Ideal for reliable data storage in harsh environments, it withstands temperatures from -55 °C to 125 °C.

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Anansix

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Digiode

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Vyrian

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One Stop Electronics

USA . 1,413 parts In-Stock

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Native Components

USA . 32 parts In-Stock

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Northwest PG Solutions

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Corphita

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Overview

Unlock unparalleled performance and reliability with the 82S129/BFA from NXP Semiconductors, a leader in innovative solutions. This high-quality OTP ROM is perfect for mission-critical applications, offering exceptional temperature resilience and stability. Its robust ceramic and metal-sealed design ensures durability, making it ideal for military and aerospace environments. Experience the value of unmatched efficiency and precision, elevating your projects to new heights!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This robust package material enhances reliability and durability, making it suitable for harsh environments.

Surface Mount: YES

The surface-mount capability allows for compact designs and efficient use of PCB space.

Package Shape: RECTANGULAR

The rectangular shape optimizes layout possibilities on printed circuit boards.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for quicker system response and easy integration into existing circuits.

Nominal Supply Voltage / Vsup: 5 V

Standard 5 V operation ensures compatibility with a wide range of electronic devices.

No. of Terminals: 16

With 16 terminals, it enables connection to multiple data lines, enhancing data transfer capabilities.

Package Style (Meter): FLATPACK

Flatpack style facilitates easier mounting on PCBs, ensuring a low profile.

Maximum Operating Temperature: 125 °C

The high operating temperature range ensures reliability in demanding thermal conditions.

Organization: 256X4

This organization format allows for flexible and efficient data storage structures.

Output Characteristics: 3-STATE

3-state output improves versatility in control signal management, beneficial for bus applications.

Minimum Operating Temperature: -55 °C

The capability to operate at low temperatures suits military and aerospace applications.

Terminal Position: DUAL

Dual terminal positioning enhances the ease of soldering and reduces assembly time.

Maximum Seated Height: 2.159 mm

The low profile design allows for more compact system designs without compromising performance.

Width: 6.731 mm

A compact width supports space-constrained applications while still maintaining performance.

Minimum Supply Voltage: 4.5 V

This lower threshold voltage provides flexibility in power supply design.

Temperature Grade: MILITARY

MIL-STD grade ensures the component can withstand extreme conditions, perfect for defense applications.

Technology: BIPOLAR

Bipolar technology promotes high speed and low power consumption, advantageous for various applications.

Parallel or Serial: PARALLEL

Parallel communication enables faster data transfer rates, optimizing overall system performance.

Terminal Form: FLAT

Flat terminals simplify the mounting process and enhance connectivity reliability.

No. of Words: 256 words

A 256-word capacity provides adequate storage for many applications, balancing performance and density.

Memory Width: 4

The 4-bit memory width facilitates efficient data handling and integration into larger systems.

Terminal Pitch: 1.27 mm

This terminal pitch supports compatibility with standard PCB designs and assembly processes.

No. of Words Code: 256

Offers sufficient word codes for a variety of applications while maintaining simplicity and efficiency.

Maximum Supply Voltage: 5.5 V

The maximum supply voltage allows for some flexibility in power supply design to accommodate variance.

Memory Density: 1024 bit

With a memory density of 1024 bits, this OTP ROM can store significant data, ideal for numerous applications.

Memory IC Type: OTP ROM

As an OTP ROM, this component provides one-time programmable memory suitable for secure data storage.

Maximum Access Time: 60 ns

The fast access time ensures rapid data retrieval, enhancing system performance.

Technical Specifications

OTP ROM 82S129/BFA attributes and parameters. Explore more OTP ROM devices from NXP Semiconductors

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-CDFP-F16

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256X4

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

2.159 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

6.731 mm

Trade Compliance

82S129/BFA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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