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82S123A/BEA

NXP Semiconductors

82S123A/BEA by NXP Semiconductors

82S123A/BEA by NXP Semiconductors is a military-grade OTP ROM with a 5V supply, featuring a 32x8 organization and max access time of 35 ns. Its ceramic, glass-sealed package ensures durability in harsh environments. Ideal for asynchronous data storage applications.

Median Price

$34.788

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Freelance Electronics

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LWI Electronics Inc

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Cyclops Electronics Ltd

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Mil-Aero Solutions, Inc.

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Native Components

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Northwest PG Solutions

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One Stop Electronics

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Overview

Unlock unparalleled reliability and performance with the 82S123A/BEA from NXP Semiconductors. Crafted for precision, this high-quality OTP ROM ensures robust operation in diverse applications, especially in military environments. With exceptional temperature endurance and a compact design, it delivers stability where it matters most. Trust NXP's legacy of excellence to enhance your projects, maximizing value and efficiency every step of the way!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed packaging provides excellent durability and protection against environmental factors, making it suitable for harsh conditions.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization in circuit designs, facilitating easier integration onto PCBs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation offers higher speed and flexibility in reading data, allowing quicker access to memory when needed.

Nominal Supply Voltage / Vsup: 5V

Operating at a nominal voltage of 5V makes this OTP ROM compatible with a wide range of electronic systems that utilize standard voltage levels.

No. of Terminals: 16

The 16-terminal configuration supports a variety of interfacing options, enhancing design versatility.

Package Style (Meter): IN-LINE

In-line package style simplifies the mounting process and facilitates better thermal management within the design.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C ensures reliability in high-temperature environments, making it ideal for military and industrial applications.

Organization: 32X8

The 32x8 organization provides a balanced structure for easy data handling, allowing for efficient access and retrieval conventions.

Output Characteristics: 3-STATE

3-state output allows for better device-to-device communication, reducing contention on data lines and improving system reliability.

Minimum Operating Temperature: -55 °C

The ability to operate at extremely low temperatures makes this ROM suitable for both military and aerospace applications.

Terminal Position: DUAL

Dual terminal positioning provides stable mounting options, enhancing the robustness of the entire assembly.

Maximum Seated Height: 5.08 mm

A managed seated height of 5.08 mm aids in optimal design flexibility and minimizes space requirements on circuit boards.

Width: 7.62 mm

At a width of 7.62 mm, this OTP ROM allows for compact designs while still providing sufficient terminal space for effective soldering and connections.

Minimum Supply Voltage: 4.5V

Operating down to a minimum of 4.5V ensures that the chip can function properly across a range of typical power supply conditions.

Length: 19.535 mm

The length is designed for compatibility with standard in-line footprints used in various electronic applications.

Temperature Grade: MILITARY

Having a military-grade temperature specification guarantees reliable performance in extreme conditions, ideal for defense applications.

Technology: BIPOLAR

Bipolar technology enhances performance in terms of speed and power efficiency, making this device suitable for high-performance applications.

Parallel or Serial: PARALLEL

The parallel configuration allows for faster data transfers, significantly improving access speed compared to serial alternatives.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure strong mechanical durability and a secure connection, reducing the risk of fatigue in high-reliability applications.

No. of Words: 32 words

Supporting 32 words allows for a reasonable data storage capacity without excessive complexity, suitable for many embedded applications.

Memory Width: 8 bits

An 8-bit memory width strikes a balance between performance and efficiency, making it ideal for many standard data processing needs.

Terminal Pitch: 2.54 mm

With a terminal pitch of 2.54 mm, this OTP ROM is compatible with a wide variety of sockets and PCB designs, enhancing its usability.

No. of Words Code: 32

The 32 words code provides practical data structuring, optimizing memory access for small to medium-level applications.

Maximum Supply Voltage: 5.5V

A maximum supply voltage of 5.5V allows for some tolerance in voltage fluctuations, ensuring consistent performance and reliability.

Memory Density: 256 bits

With a memory density of 256 bits, this OTP ROM provides adequate storage for applications requiring moderate memory usage.

Memory IC Type: OTP ROM

As an OTP ROM, this memory IC is ideal for applications where data integrity is critical but does not require reprogramming, enhancing security.

Maximum Access Time: 35 ns

With a maximum access time of 35 ns, data retrieval is fast, making it suitable for high-speed operations.

Technical Specifications

OTP ROM 82S123A/BEA attributes and parameters. Explore more OTP ROM devices from NXP Semiconductors

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-GDIP-T16

Length:

19.535 mm

Memory Density:

256 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32X8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

82S123A/BEA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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