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82S115/BJA

NXP Semiconductors

82S115/BJA by NXP Semiconductors

82S115/BJA by NXP Semiconductors is a military-grade OTP ROM with a 5V supply, featuring a 512x8 organization and max access time of 90 ns. It operates asynchronously in a dual terminal, ceramic package. Ideal for reliable data storage in harsh environments.

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Anansix

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Digiode

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Electronic Expediters

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ABC Electronics Ltd.

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Resion

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Manoshevitz Elec. Sales

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PC Components Company LLC

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Bristol Electronics

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Native Components

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Northwest PG Solutions

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One Stop Electronics

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Overview

Elevate your projects with the 82S115/BJA from NXP Semiconductors—where unmatched quality meets reliability. This military-grade OTP ROM ensures optimal performance in demanding environments, delivering peace of mind for critical applications. With a robust design and versatility across various sectors, it provides seamless integration and long-lasting durability. Trust NXP to empower your innovations with cutting-edge solutions that drive success!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package provides robustness and protection against environmental factors, ensuring long-term reliability.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of PCB space and facilitates easy integration into various designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for simpler control and faster response times, making it suitable for real-time applications.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V is standard and compatible with many systems, enhancing versatility.

No. of Terminals: 24

The 24 terminals provide sufficient connectivity options for interfacing with different circuit layouts.

Package Style (Meter): IN-LINE

In-line package style simplifies assembly processes and can fit well into various circuit board designs.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature makes this product suitable for demanding environments and applications.

Organization: 512X8

The 512x8 organization provides an efficient data structure that balances word size with total memory capacity.

Output Characteristics: 3-STATE

3-state output allows for multiple devices to share the same bus, improving design flexibility and efficiency.

Minimum Operating Temperature: -55 °C

Withstands extremely low temperatures, making it ideal for use in harsh environments or specialized applications.

Terminal Position: DUAL

Dual terminal positioning allows for easier PCB layout and improved manufacturability.

Maximum Seated Height: 5.715 mm

A compact seated height helps save space on circuit boards while providing a stable and reliable connection.

Width: 15.24 mm

The moderate width of 15.24 mm enables it to fit in a variety of designs while ensuring efficient use of space.

Minimum Supply Voltage (Vsup): 4.5 V

A minimum supply voltage of 4.5V ensures compatibility with a wide range of power supply configurations.

Temperature Grade: MILITARY

The military-grade temperature rating guarantees reliability and performance in extreme conditions.

Technology: BIPOLAR

Bipolar technology offers advantages in speed and power consumption, making it suitable for many applications.

Parallel or Serial: PARALLEL

Parallel data access allows for faster read and write operations, improving overall system performance.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and ease of soldering, enhancing reliability.

No. of Words: 512 words

Offering 512 words ensures adequate storage for a range of data and instruction sets, providing versatility.

Memory Width: 8

An 8-bit memory width strikes a balance between efficient data handling and simplicity in design.

Terminal Pitch: 2.54 mm

A standard terminal pitch of 2.54 mm (0.1 inch) facilitates easy prototyping and compatibility with common PCB layouts.

No. of Words Code: 512

The product’s coding structure with 512 words provides a reliable means of memory addressing and management.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum supply voltage of 5.5V ensures robustness against voltage fluctuations in the operational environment.

Memory Density: 4096 bit

With a memory density of 4096 bits, this OTP ROM is suitable for applications requiring moderate storage capacity.

Memory IC Type: OTP ROM

As an OTP ROM, this product offers single-time programmability, ideal for applications with locked data after initial writing.

Maximum Access Time: 90 ns

A maximum access time of 90 ns ensures quick data retrieval, enhancing the efficiency of integrated systems.

Technical Specifications

OTP ROM 82S115/BJA attributes and parameters. Explore more OTP ROM devices from NXP Semiconductors

Specs

Maximum Access Time:

90 ns

JESD-30 Code:

R-GDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.715 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

82S115/BJA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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