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BQ2022ALPRE3

Texas Instruments

BQ2022ALPRE3 by Texas Instruments

BQ2022ALPRE3 by Texas Instruments is an OTP ROM with 1024-bit memory density. It operates asynchronously at a max clock frequency of 0.01667 MHz and has a nominal voltage of 2.7V. This device, in a cylindrical package shape, is commonly used for applications requiring non-volatile memory storage with low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,372 parts In-Stock

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Digiode

USA . 2,255 parts In-Stock

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VNN

France . 1,882 parts In-Stock

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Nova Conductors

Japan . 29 parts In-Stock

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Parana Technologies

USA . 145 parts In-Stock

1+ parts

$3.491

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$4.015

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145

$3.491

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$4.015

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DigiPath Technology Company

USA . 1,799 parts In-Stock

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$3.845

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$3.537

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$3.845

$3.537

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IDEA Electronic Components Group

UK . 2,207 parts In-Stock

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$3.923

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$3.531

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2,207

$3.923

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$3.531

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ChromeModa Solutions

Germany . 226 parts In-Stock

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$3.923

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$3.217

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226

$3.923

$3.217

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Corohmni

South Africa . 289 parts In-Stock

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$5.477

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$5.477

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AZTECH Wire

Italy . 708 parts In-Stock

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$12.947

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708

$12.947

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Ampacity Inc.

Singapore . 876 parts In-Stock

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$22.000

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$22.000

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One Stop Electronics

USA . 1,146 parts In-Stock

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$27.000

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Continental Prestige Electronics

USA . 2,988 parts In-Stock

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Argo Parts USA

USA . 2,496 parts In-Stock

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Corphita

USA . 833 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Discover the BQ2022ALPRE3 by Texas Instruments, a high-quality OTP ROM that offers unmatched reliability and performance. With Texas Instruments' reputation for excellence in manufacturing, this product is designed to meet the demands of various applications. Offering a nominal supply voltage of 2.7V and maximum clock frequency of 0.01667 MHz, the BQ2022ALPRE3 provides customers with exceptional value and benefits. Ideal for applications requiring secure data storage, this OTP ROM is a versatile solution that delivers superior performance and durability. Choose Texas Instruments for quality you can trust.

Feature Benefit Bullets

Package Shape: ROUND

The ROUND package shape allows for space-efficient and compact design, making it suitable for applications with limited space constraints.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent operation of the device, making it versatile and easy to integrate into different systems.

Input/Output Type: COMMON

The common input/output type simplifies the interface and communication with other components, reducing the complexity of the overall system design.

Nominal Supply Voltage / Vsup (V): 2.7

The 2.7V supply voltage ensures efficient power consumption and compatibility with a wide range of electronic devices.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliable performance even in challenging environmental conditions.

Organization: 1KX1

The 1KX1 organization provides a balance between memory capacity and access speed, suitable for storing and retrieving data efficiently.

Technology: CMOS

The CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of systems, making it a reliable choice for various applications.

Terminal Pitch: 1.27 mm

The 1.27mm terminal pitch facilitates easy integration and soldering onto circuit boards, ensuring a secure and reliable connection.

Technical Specifications

OTP ROM BQ2022ALPRE3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Additional Features:

ORGANIZED AS 4 PAGES OF 32 BYTES EACH

Maximum Clock Frequency (fCLK):

.01667 MHz

Input/Output Type:

COMMON

JESD-30 Code:

O-XBCY-W3

JESD-609 Code:

e3

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

3

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

1KX1

Output Characteristics:

OPEN-DRAIN

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SIP3,.1,50

Package Shape:

Package Style (Meter):

CYLINDRICAL

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

.02 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.65 V

Nominal Supply Voltage / Vsup (V):

2.7

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Pitch:

1.27 mm

Terminal Position:

BOTTOM

Trade Compliance

BQ2022ALPRE3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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