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TBP24S81-55NP1

Texas Instruments

TBP24S81-55NP1 by Texas Instruments

The Texas Instruments TBP24S81-55NP1 is a 2Kx4 OTP ROM with 8192-bit memory density and 55ns max access time. It operates b/w 0°C to 70°C, drawing a max supply current of 175mA. Ideal for commercial applications requiring reliable non-volatile memory storage in a rectangular plastic/epoxy package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,083 parts In-Stock

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Digiode

USA . 3,632 parts In-Stock

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3,632

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Distributors (Availability)

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Parana Technologies

USA . 946 parts In-Stock

1+ parts

$5.287

100+ parts

-

1k+ parts

$5.915

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946

$5.287

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$5.915

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DigiPath Technology Company

USA . 896 parts In-Stock

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$5.822

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-

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896

$5.822

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ChromeModa Solutions

Germany . 6,781 parts In-Stock

1+ parts

$5.941

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$4.872

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6,781

$5.941

$4.872

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IDEA Electronic Components Group

UK . 1,892 parts In-Stock

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$5.941

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$5.347

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1,892

$5.941

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$5.347

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AZTECH Wire

Italy . 500 parts In-Stock

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$14.526

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500

$14.526

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One Stop Electronics

USA . 546 parts In-Stock

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$22.000

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546

$22.000

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Corphita

USA . 4,211 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TBP24S81-55NP1 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and performance. This OTP ROM device offers 2048 words of memory, 8192 bits of density, and a fast access time of 55 ns. Ideal for various applications, this product provides customers with the value of secure data storage in a convenient rectangular package. Trust Texas Instruments to deliver cutting-edge technology that meets your needs efficiently and effectively.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the OTP ROM, making it suitable for long-term use.

No. of Terminals: 18

Having 18 terminals allows for sufficient connectivity options, making it versatile and compatible with various systems.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this OTP ROM can function reliably even in demanding environments.

Organization: 2KX4

The organization of 2KX4 provides a balance between storage capacity and data access speed, making it efficient for data retrieval.

Technology: TTL

TTL technology offers reliable performance and compatibility with TTL logic systems, ensuring seamless integration with existing setups.

Maximum Supply Current: 175 mA

The maximum supply current of 175 mA ensures sufficient power for the OTP ROM to operate efficiently without any power-related issues.

Memory Width: 4

A memory width of 4 allows for efficient data processing and storage, enhancing the overall performance of the OTP ROM.

Maximum Access Time: 55 ns

The maximum access time of 55 ns indicates fast data retrieval, reducing latency and improving the overall responsiveness of the OTP ROM.

Technical Specifications

OTP ROM TBP24S81-55NP1 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-PDIP-T18

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

175 mA

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP24S81-55NP1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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