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TBP24S41J

Texas Instruments

TBP24S41J by Texas Instruments

TBP24S41J by Texas Instruments is an OTP ROM memory IC with 1KX4 organization, 4096 bit memory density, and operates in parallel mode. It has a max access time of 60 ns and is suitable for applications requiring non-volatile memory storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,539 parts In-Stock

1+ parts

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8,539

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Digiode

USA . 272 parts In-Stock

1+ parts

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272

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ECAB

Sweden . 140 parts In-Stock

1+ parts

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140

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Manoshevitz Elec. Sales

Israel . 5 parts In-Stock

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5

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Holdelec - ElecDif-Pro

France . 2 parts In-Stock

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,105 parts In-Stock

1+ parts

$1.981

100+ parts

-

1k+ parts

$2.512

10k+ parts

-

1,105

$1.981

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$2.512

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DigiPath Technology Company

USA . 1,115 parts In-Stock

1+ parts

$2.181

100+ parts

$2.007

1k+ parts

-

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1,115

$2.181

$2.007

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ChromeModa Solutions

Germany . 2,876 parts In-Stock

1+ parts

$2.226

100+ parts

$1.825

1k+ parts

-

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2,876

$2.226

$1.825

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IDEA Electronic Components Group

UK . 2,359 parts In-Stock

1+ parts

$2.226

100+ parts

-

1k+ parts

$2.003

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2,359

$2.226

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$2.003

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AZTECH Wire

Italy . 635 parts In-Stock

1+ parts

$13.546

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-

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635

$13.546

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One Stop Electronics

USA . 1,332 parts In-Stock

1+ parts

$28.000

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1,332

$28.000

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Corphita

USA . 3,421 parts In-Stock

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3,421

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Kepictronics

USA . 69 parts In-Stock

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69

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Assy Fe

Spain . 10 parts In-Stock

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10

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Overview

Unlock the power of reliable data storage with the TBP24S41J by Texas Instruments. Crafted with precision and quality, this OTP ROM offers unparalleled performance and efficiency. Ideal for a wide range of applications, this product is designed to meet your every need. Trust in the expertise of Texas Instruments to provide you with a solution that delivers value, benefits, and advantages like no other. Upgrade your systems today with the TBP24S41J and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Ensures durability and protection for the internal components of the OTP ROM, making it suitable for various environments.

Operating Mode: ASYNCHRONOUS

Allows for independent operation without the need for synchronization signals, offering flexibility in usage.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage supply requirement, making it compatible with common power sources.

Memory Density: 4096 bit

Offers high capacity for storing data, suitable for applications requiring large memory storage.

Maximum Access Time: 60 ns

Provides fast access to data, ensuring efficient performance of the OTP ROM.

Technical Specifications

OTP ROM TBP24S41J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-GDIP-T18

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

18

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX4

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

OTP ROMs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

TBP24S41J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-135-8054, 5962011358054

NIIN

011358054

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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