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5962-01-217-9458

Texas Instruments

5962-01-217-9458 by Texas Instruments

Texas Instruments' 5962-01-217-9458 is a MILITARY-grade OTP ROM with 1KX8 organization, 8192-bit memory density, and 175 ns access time. It operates b/w -55 to 125 °C and has a supply voltage of 5V. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,477 parts In-Stock

1+ parts

-

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8,477

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Digiode

USA . 2,503 parts In-Stock

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-

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2,503

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 817 parts In-Stock

1+ parts

$1.841

100+ parts

-

1k+ parts

$2.389

10k+ parts

-

817

$1.841

-

$2.389

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DigiPath Technology Company

USA . 890 parts In-Stock

1+ parts

$2.027

100+ parts

-

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890

$2.027

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IDEA Electronic Components Group

UK . 1,187 parts In-Stock

1+ parts

$2.068

100+ parts

-

1k+ parts

$1.861

10k+ parts

-

1,187

$2.068

-

$1.861

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ChromeModa Solutions

Germany . 370 parts In-Stock

1+ parts

$2.068

100+ parts

$1.696

1k+ parts

-

10k+ parts

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370

$2.068

$1.696

-

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AZTECH Wire

Italy . 780 parts In-Stock

1+ parts

$9.632

100+ parts

-

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780

$9.632

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One Stop Electronics

USA . 305 parts In-Stock

1+ parts

$30.000

100+ parts

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305

$30.000

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Corphita

USA . 2,800 parts In-Stock

1+ parts

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2,800

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Northwest PG Solutions

USA . 1,811 parts In-Stock

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1,811

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Native Components

USA . 69 parts In-Stock

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69

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Overview

Experience the unmatched quality and reliability of the 5962-01-217-9458 by Texas Instruments, a leading manufacturer in the industry. This OTP ROM offers exceptional value with its wide range of applications, providing customers with reliable performance and durability. Whether you need it for military-grade technology or other specialized projects, this product delivers unparalleled benefits and advantages that will exceed your expectations. Trust Texas Instruments for all your semiconductor needs.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides good protection against external factors and ensures durability of the product.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V makes it compatible with commonly used power sources.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions.

Organization: 1KX8

Organized as 1K X 8 means it can store 1 kilobit of data with a memory width of 8 which suits many applications.

Technology: TTL

Using TTL technology ensures reliable and fast data processing within the device.

Memory IC Type: OTP ROM

Being OTP (One-Time Programmable) ROM means the data is permanently stored and cannot be changed, ensuring data security.

Maximum Access Time: 175 ns

Having a fast access time of 175 ns allows for quick retrieval of data, improving performance.

Technical Specifications

OTP ROM 5962-01-217-9458 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

175 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-217-9458 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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