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TBP24SA41N

Texas Instruments

TBP24SA41N by Texas Instruments

TBP24SA41N by Texas Instruments is a 1KX4 OTP ROM with 4096 bit memory density. Operating at 5V, it offers a max access time of 60ns. Ideal for commercial applications, this rectangular IC features an asynchronous operating mode and through-hole terminal form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,140 parts In-Stock

1+ parts

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8,140

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Digiode

USA . 1,547 parts In-Stock

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1,547

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 344 parts In-Stock

1+ parts

$2.000

100+ parts

-

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344

$2.000

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Parana Technologies

USA . 429 parts In-Stock

1+ parts

$4.420

100+ parts

-

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$4.844

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429

$4.420

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$4.844

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DigiPath Technology Company

USA . 519 parts In-Stock

1+ parts

$4.867

100+ parts

$4.477

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-

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519

$4.867

$4.477

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IDEA Electronic Components Group

UK . 1,278 parts In-Stock

1+ parts

$4.966

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$4.469

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1,278

$4.966

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$4.469

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ChromeModa Solutions

Germany . 562 parts In-Stock

1+ parts

$4.966

100+ parts

$4.072

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562

$4.966

$4.072

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AZTECH Wire

Italy . 603 parts In-Stock

1+ parts

$15.778

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603

$15.778

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Corphita

USA . 4,598 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TBP24SA41N by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and performance. This OTP ROM device is perfect for applications requiring secure and permanent data storage solutions. With its easy installation and versatile design, this product offers unparalleled value and benefits to customers looking for a reliable memory solution. Trust Texas Instruments to deliver excellence in technology with the TBP24SA41N.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that can protect the ROM chip from physical damage and ensure longevity of the product.

Operating Mode: ASYNCHRONOUS

Allows for flexible and independent access to memory locations, improving the efficiency of data retrieval.

Nominal Supply Voltage: 5V

Standard voltage requirement that is widely compatible with most systems, ensuring ease of integration.

Temperature Grade: COMMERCIAL

Suitable for use in commercial environments with a temperature range of 0 to 70°C, providing reliable performance.

Technology: BIPOLAR

Offers high speed and low power consumption, making it ideal for applications where efficiency is crucial.

Memory Density: 4096 bit

Provides ample storage capacity for storing large amounts of data, making it suitable for various applications.

Maximum Access Time: 60 ns

Fast access time allows for quick retrieval of data, ensuring responsive performance of the product.

Technical Specifications

OTP ROM TBP24SA41N attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-PDIP-T18

Length:

22.48 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

18

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

OTP ROMs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

TBP24SA41N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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