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5962-01-225-9117

Texas Instruments

5962-01-225-9117 by Texas Instruments

Texas Instruments' 5962-01-225-9117 is a 512x8 OTP ROM with 4096-bit memory density. Operating at 5V, it has a max access time of 75ns and operates in commercial temperature grades. This rectangular ceramic package with 20 terminals is ideal for applications requiring non-volatile memory storage in TTL technology environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,823 parts In-Stock

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Digiode

USA . 3,682 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 282 parts In-Stock

1+ parts

$2.441

100+ parts

$226.709

1k+ parts

$2.197

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282

$2.441

$226.709

$2.197

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DigiPath Technology Company

USA . 716 parts In-Stock

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$2.688

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716

$2.688

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ChromeModa Solutions

Germany . 3,051 parts In-Stock

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$2.743

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$2.249

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3,051

$2.743

$2.249

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IDEA Electronic Components Group

UK . 952 parts In-Stock

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$2.743

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$2.469

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952

$2.743

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Native Components

USA . 570 parts In-Stock

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$12.530

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570

$12.530

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Northwest PG Solutions

USA . 683 parts In-Stock

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$13.783

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$12.405

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683

$13.783

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AZTECH Wire

Italy . 851 parts In-Stock

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$15.056

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$15.056

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One Stop Electronics

USA . 380 parts In-Stock

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$30.000

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Corphita

USA . 1,522 parts In-Stock

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Overview

Elevate your projects with the reliable 5962-01-225-9117 by Texas Instruments, a top-quality OTP ROM that delivers exceptional performance and durability. Manufactured by a trusted industry leader like Texas Instruments, this versatile component is perfect for a wide range of applications, offering unmatched value and benefits to customers. Whether you're looking to enhance your devices with seamless memory integration or streamline your operations with fast access times, this product is the perfect solution for all your needs. Choose Texas Instruments for superior quality and performance that you can trust.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material offers high durability and reliability, making it suitable for harsh operating environments.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage of 5V ensures consistent and reliable performance of the OTP ROM.

No. of Terminals: 20

Sufficient number of terminals for easy connectivity and integration into electronic circuits.

Maximum Operating Temperature: 70 °C

High operating temperature range allows the OTP ROM to be used in diverse applications and environments.

Organization: 512X8

Organized as 512 words of 8 bits each for efficient data storage and retrieval operations.

Technology: TTL

Uses TTL technology which is known for its simplicity, reliability, and ease of use in digital circuits.

Memory Density: 4096 bit

High memory density enables storage of a large amount of data in a compact OTP ROM chip.

Maximum Access Time: 75 ns

Fast access time of 75 ns ensures quick retrieval of data from the OTP ROM, making it suitable for high-speed applications.

Technical Specifications

OTP ROM 5962-01-225-9117 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-225-9117 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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