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TBP24S41NP1

Texas Instruments

TBP24S41NP1 by Texas Instruments

TBP24S41NP1 by Texas Instruments is a 5V OTP ROM with 1KX4 organization and 4096-bit memory density. It operates b/w 0 to 70°C, has a max access time of 60ns, and comes in an IN-LINE package style. Ideal for applications requiring non-volatile memory storage in commercial-grade temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,717 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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4,717

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-

-

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Digiode

USA . 680 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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680

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 788 parts In-Stock

1+ parts

$4.453

100+ parts

-

1k+ parts

$4.884

10k+ parts

-

788

$4.453

-

$4.884

-

DigiPath Technology Company

USA . 650 parts In-Stock

1+ parts

$4.903

100+ parts

$4.511

1k+ parts

-

10k+ parts

-

650

$4.903

$4.511

-

-

ChromeModa Solutions

Germany . 4,568 parts In-Stock

1+ parts

$5.003

100+ parts

$4.102

1k+ parts

-

10k+ parts

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4,568

$5.003

$4.102

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IDEA Electronic Components Group

UK . 617 parts In-Stock

1+ parts

$5.003

100+ parts

-

1k+ parts

$4.503

10k+ parts

-

617

$5.003

-

$4.503

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One Stop Electronics

USA . 1,006 parts In-Stock

1+ parts

$12.000

100+ parts

-

1k+ parts

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10k+ parts

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1,006

$12.000

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AZTECH Wire

Italy . 684 parts In-Stock

1+ parts

$12.594

100+ parts

-

1k+ parts

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10k+ parts

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684

$12.594

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Corphita

USA . 204 parts In-Stock

1+ parts

-

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204

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Overview

Experience unparalleled reliability and performance with the TBP24S41NP1 from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures superior quality in every product they create. The TBP24S41NP1 belongs to the OTP ROM category, offering endless possibilities for applications in various industries. Customers can trust in the value and benefits that this product brings, providing them with a reliable solution for their needs. Trust Texas Instruments for cutting-edge technology and exceptional products that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ensuring the product can withstand various environmental conditions.

Nominal Supply Voltage / Vsup (V): 5

Having a nominal supply voltage of 5V makes it compatible with standard power supplies, making it easy to integrate into existing systems.

No. of Terminals: 18

Having 18 terminals allows for sufficient connectivity options, making it versatile and suitable for a range of applications.

Maximum Operating Temperature: 70 °C

The maximum operating temperature of 70°C ensures reliable performance even in high-temperature environments.

Memory Density: 4096 bit

With a memory density of 4096 bits, this OTP ROM can store a large amount of data efficiently.

Maximum Access Time: 60 ns

The maximum access time of 60 nanoseconds ensures fast and responsive data retrieval, making it suitable for time-sensitive applications.

Technical Specifications

OTP ROM TBP24S41NP1 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-PDIP-T18

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP24S41NP1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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