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SNC54186J

Texas Instruments

SNC54186J by Texas Instruments

SNC54186J by Texas Instruments is a MIL-STD-883 Class B OTP ROM IC with 64x8 organization, TTL technology, and -55 to 125°C operating temperature range. Ideal for military applications requiring reliable memory storage in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,410 parts In-Stock

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7,410

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Digiode

USA . 1,847 parts In-Stock

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1,847

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Distributors (Availability)

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Parana Technologies

USA . 430 parts In-Stock

1+ parts

$1.891

100+ parts

-

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$2.433

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430

$1.891

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$2.433

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DigiPath Technology Company

USA . 809 parts In-Stock

1+ parts

$2.082

100+ parts

$1.916

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809

$2.082

$1.916

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ChromeModa Solutions

Germany . 1,739 parts In-Stock

1+ parts

$2.125

100+ parts

$1.742

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1,739

$2.125

$1.742

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IDEA Electronic Components Group

UK . 1,221 parts In-Stock

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$2.125

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$1.912

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1,221

$2.125

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$1.912

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AZTECH Wire

Italy . 602 parts In-Stock

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$6.009

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602

$6.009

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One Stop Electronics

USA . 584 parts In-Stock

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$27.000

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584

$27.000

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Corphita

USA . 3,155 parts In-Stock

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Overview

Unlock the power of reliable data storage with the SNC54186J by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments ensures top-notch quality and performance in every product. The SNC54186J falls under the OTP ROM category, offering secure one-time programmable memory for military-grade applications. With its MIL-STD-883 Class B screening level and wide temperature range, this IC is perfect for demanding environments. Trust Texas Instruments to deliver unmatched value and benefits with the SNC54186J, providing peace of mind and exceptional performance for your critical projects.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides excellent durability and thermal stability, making it suitable for military applications where reliability is crucial.

Screening Level: MIL-STD-883 Class B (Modified)

This screening level ensures that the OTP ROM meets high-quality standards and is suitable for use in demanding environments.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into circuit boards and provides efficient use of space.

No. of Terminals: 24

Sufficient number of terminals for connectivity and interfacing with other components in the system.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures the OTP ROM can withstand harsh environmental conditions without performance degradation.

Organization: 64X8

Organized in a 64 words by 8 memory width configuration, providing adequate memory storage and retrieval capabilities.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the OTP ROM to function reliably in extreme cold conditions.

Terminal Position: DUAL

Dual terminal position enhances connectivity and reliability of the OTP ROM within the system.

Temperature Grade: MILITARY

Military-grade temperature tolerance ensures the OTP ROM is suitable for use in rugged military applications.

Technology: TTL

TTL technology offers fast operation speeds and low power consumption, making the OTP ROM efficient and reliable.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enables easy soldering and secure connection of the OTP ROM to the circuit board.

Memory Width: 8

Memory width of 8 bits allows for efficient storage and retrieval of data within the OTP ROM.

No. of Words Code: 64

64 words code configuration offers sufficient memory capacity for storing program instructions and data.

Memory IC Type: OTP ROM

OTP ROM technology ensures that data stored in the memory is non-volatile and cannot be altered, providing secure and reliable storage for critical information.

Technical Specifications

OTP ROM SNC54186J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T24

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

64 words

No. of Words Code:

64

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

64X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNC54186J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-030-9511, 5962010309511, 5962-01-003-2304, 5962010032304

NIIN

010309511, 010032304

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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