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SNC54186W

Texas Instruments

SNC54186W by Texas Instruments

SNC54186W by Texas Instruments is a MIL-STD-883 Class B OTP ROM with 64x8 organization, suitable for military applications. It operates b/w -55°C to 125°C, has 24 terminals in a flatpack package style, and uses TTL technology. Ideal for high-temperature environments requiring reliable non-volatile memory solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,973 parts In-Stock

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8,973

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Digiode

USA . 131 parts In-Stock

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131

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,740 parts In-Stock

1+ parts

$2.973

100+ parts

-

1k+ parts

$3.473

10k+ parts

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1,740

$2.973

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$3.473

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ChromeModa Solutions

Germany . 3,466 parts In-Stock

1+ parts

$3.340

100+ parts

$2.739

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3,466

$3.340

$2.739

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IDEA Electronic Components Group

UK . 293 parts In-Stock

1+ parts

$3.340

100+ parts

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$3.006

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293

$3.340

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$3.006

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AZTECH Wire

Italy . 680 parts In-Stock

1+ parts

$16.851

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680

$16.851

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One Stop Electronics

USA . 1,632 parts In-Stock

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$20.000

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1,632

$20.000

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Corphita

USA . 3,469 parts In-Stock

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3,469

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DigiPath Technology Company

USA . 1,909 parts In-Stock

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100+ parts

$3.011

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1,909

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$3.011

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Overview

Elevate your projects with the SNC54186W by Texas Instruments. Crafted with precision and quality, this OTP ROM offers unparalleled reliability and performance. Whether you're working on aerospace, defense, or industrial applications, this product is designed to meet your needs. With its advanced technology and military-grade temperature grade, the SNC54186W ensures optimal functionality in even the most challenging environments. Trust Texas Instruments to deliver exceptional value and benefits, making your projects shine brighter than ever before.

Feature Benefit Bullets

Package Body Material: CERAMIC

The ceramic package body material provides better resistance to high temperatures and mechanical stress, ensuring the reliability and longevity of the OTP ROM chip.

Surface Mount: YES

Being surface mountable, this OTP ROM chip can be easily integrated into modern circuit boards, simplifying the manufacturing process and reducing production time.

Screening Level: MIL-STD-883 Class B (Modified)

The MIL-STD-883 Class B screening level ensures that the OTP ROM chip meets strict military standards for quality and reliability, making it suitable for use in rugged environments.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on the circuit board, making it ideal for applications where space is limited.

No. of Terminals: 24

With 24 terminals, this OTP ROM chip offers enough connectivity options for versatile integration into various electronic systems.

Package Style (Meter): FLATPACK

The flatpack package style enhances heat dissipation and allows for easy handling during assembly, contributing to overall system performance.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures that the OTP ROM chip can withstand elevated temperatures without compromising its functionality, making it suitable for demanding environments.

Organization: 64X8

The organization of 64 words by 8 memory width enhances the efficiency of data storage and retrieval, providing optimal performance for the intended applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows the OTP ROM chip to function reliably even in extremely cold conditions, widening its potential use in diverse environments.

Terminal Position: DUAL

The dual terminal position offers increased connectivity options and flexibility for circuit board layout, enabling seamless integration of the OTP ROM chip into various electronic systems.

Temperature Grade: MILITARY

The military-grade temperature grade ensures that the OTP ROM chip can withstand harsh environmental conditions and extreme temperature fluctuations, making it a reliable choice for mission-critical applications.

Technology: TTL

The TTL technology employed in the OTP ROM chip provides fast and reliable data processing, making it suitable for applications that require high-speed performance and low power consumption.

Terminal Form: FLAT

The flat terminal form simplifies the installation and connection of the OTP ROM chip, ensuring a secure and stable electrical connection for optimal performance.

No. of Words: 64 words

With a capacity of 64 words, the OTP ROM chip offers ample storage space for data, enabling efficient data processing and retrieval in various electronic systems.

Memory Width: 8

The memory width of 8 enhances the data processing capabilities of the OTP ROM chip, enabling quick access to stored information and efficient operation of electronic devices.

Terminal Pitch: 1.27 mm

The small terminal pitch of 1.27mm allows for high-density mounting of the OTP ROM chip on the circuit board, saving space and improving overall system performance.

No. of Words Code: 64

The 64 words code capacity of the OTP ROM chip ensures compatibility with a wide range of applications, making it a versatile and flexible choice for various electronic systems.

Memory IC Type: OTP ROM

The OTP ROM memory IC type offers non-volatile storage of data, ensuring that the stored information is retained even when the power is turned off, making it suitable for critical data storage applications.

Technical Specifications

OTP ROM SNC54186W attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDFP-F24

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

64 words

No. of Words Code:

64

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

64X8

Package Body Material:

CERAMIC

Package Code:

DFP

Package Equivalence Code:

FL24,.4

Package Shape:

Package Style (Meter):

FLATPACK

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

SNC54186W Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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