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SNC54S477J

Texas Instruments

SNC54S477J by Texas Instruments

The Texas Instruments SNC54S477J is a MIL-STD-883 Class B OTP ROM IC with 1KX4 organization, 4096-bit memory density, and TTL technology. It operates b/w -55°C to 125°C, making it suitable for military-grade applications requiring reliable non-volatile memory storage in harsh environments. The IC features an 18-terminal IN-LINE package style with CERAMIC body material and THROUGH-HOLE terminal form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,993 parts In-Stock

1+ parts

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6,993

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Digiode

USA . 3,702 parts In-Stock

1+ parts

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3,702

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,475 parts In-Stock

1+ parts

$3.250

100+ parts

$301.838

1k+ parts

$2.925

10k+ parts

-

1,475

$3.250

$301.838

$2.925

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DigiPath Technology Company

USA . 1,202 parts In-Stock

1+ parts

$3.579

100+ parts

-

1k+ parts

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10k+ parts

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1,202

$3.579

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ChromeModa Solutions

Germany . 5,665 parts In-Stock

1+ parts

$3.652

100+ parts

$2.995

1k+ parts

-

10k+ parts

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5,665

$3.652

$2.995

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IDEA Electronic Components Group

UK . 2,145 parts In-Stock

1+ parts

$3.652

100+ parts

-

1k+ parts

$3.287

10k+ parts

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2,145

$3.652

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$3.287

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One Stop Electronics

USA . 439 parts In-Stock

1+ parts

$7.000

100+ parts

-

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10k+ parts

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439

$7.000

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AZTECH Wire

Italy . 254 parts In-Stock

1+ parts

$8.862

100+ parts

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254

$8.862

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Corphita

USA . 4,874 parts In-Stock

1+ parts

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4,874

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Overview

Elevate your electronic designs with the high-quality SNC54S477J OTP ROM by Texas Instruments. This military-grade memory IC offers unparalleled reliability and durability, making it ideal for a wide range of applications. From aerospace to defense, this product delivers exceptional performance in extreme environments. Trust Texas Instruments to provide cutting-edge technology that exceeds expectations. Choose the SNC54S477J for unmatched value and benefits that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent heat dissipation and durability, making this OTP ROM suitable for high temperature environments.

Screening Level: MIL-STD-883 Class B (Modified)

The MIL-STD-883 Class B screening ensures high reliability and adherence to quality standards, making this OTP ROM ideal for critical applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space and easy integration into existing systems.

No. of Terminals: 18

Having 18 terminals provides flexibility in connectivity options and compatibility with various systems.

Package Style (Meter): IN-LINE

The in-line package style simplifies installation and maintenance, making it a user-friendly option.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this OTP ROM can withstand high heat conditions without compromising performance.

Organization: 1KX4

The 1KX4 organization allows for efficient data storage and retrieval, enhancing the overall performance of the OTP ROM.

Minimum Operating Temperature: -55 °C

The OTP ROM can operate effectively in extremely low temperatures, making it suitable for a wide range of environments.

Terminal Position: DUAL

The dual terminal position offers redundancy and improved reliability in connecting the OTP ROM to external devices.

Temperature Grade: MILITARY

Designed to meet military-grade specifications, this OTP ROM ensures exceptional performance and reliability under rugged conditions.

Technology: TTL

The TTL technology used in this OTP ROM delivers fast and reliable data processing, making it a preferred choice for high-speed applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies PCB assembly and ensures secure connections, enhancing the overall durability of the OTP ROM.

No. of Words: 1024 words

With 1024 words capacity, this OTP ROM can store a significant amount of data, making it suitable for data-intensive applications.

Memory Width: 4

The memory width of 4 bits allows for efficient data retrieval and processing, enhancing the overall performance of the OTP ROM.

Terminal Pitch: 2.54 mm

The 2.54 mm terminal pitch provides compatibility with standard PCB layouts, simplifying the integration of the OTP ROM into existing systems.

No. of Words Code: 1K

The 1K words code allows for easy identification and compatibility with other systems, enhancing the versatility of this OTP ROM.

Memory Density: 4096 bit

With a memory density of 4096 bits, this OTP ROM offers ample storage capacity for various data processing needs.

Memory IC Type: OTP ROM

As an OTP ROM, this memory IC provides non-volatile storage capabilities, ensuring data retention even when power is removed.

Technical Specifications

OTP ROM SNC54S477J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T18

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX4

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNC54S477J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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