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CBP28P42MJ

Texas Instruments

CBP28P42MJ by Texas Instruments

CBP28P42MJ by Texas Instruments is a MIL-STD-883 Class B (Modified) OTP ROM with 512x8 organization and 4096-bit memory density. Operating b/w -55°C to 125°C, it has a supply voltage of 5V and comes in an IN-LINE package style. Ideal for military-grade applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,084 parts In-Stock

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Digiode

USA . 1,795 parts In-Stock

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1,795

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Distributors (Availability)

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Native Components

USA . 928 parts In-Stock

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$1.133

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928

$1.133

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Northwest PG Solutions

USA . 1,746 parts In-Stock

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$1.246

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$1.246

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Parana Technologies

USA . 2,093 parts In-Stock

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$3.615

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$4.130

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2,093

$3.615

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$4.130

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ChromeModa Solutions

Germany . 3,632 parts In-Stock

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$4.062

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$3.331

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3,632

$4.062

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IDEA Electronic Components Group

UK . 2,073 parts In-Stock

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$4.062

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$3.656

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2,073

$4.062

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AZTECH Wire

Italy . 597 parts In-Stock

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$10.201

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$10.201

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One Stop Electronics

USA . 1,170 parts In-Stock

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$25.000

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Corphita

USA . 4,587 parts In-Stock

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DigiPath Technology Company

USA . 893 parts In-Stock

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$3.662

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Overview

Elevate your designs with the CBP28P42MJ by Texas Instruments, a high-quality OTP ROM memory IC that offers unparalleled reliability and performance. Manufactured by industry leader Texas Instruments, this product is ideal for military-grade applications due to its MIL-STD-883 Class B screening level. With a wide temperature range and 512x8 organization, this OTP ROM provides a robust solution for critical projects. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent thermal stability and are resistant to high temperatures, making this OTP ROM suitable for rugged environments.

Screening Level: MIL-STD-883 Class B (Modified)

The modified MIL-STD-883 screening ensures the reliability and quality of the product, making it suitable for military and aerospace applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power systems and makes integration easier.

No. of Words: 512 words

With a capacity of 512 words, this OTP ROM provides ample storage for program code or data, making it versatile for various applications.

Technology: TTL

Using TTL technology ensures fast and reliable performance, making this OTP ROM a dependable choice for critical systems.

Technical Specifications

OTP ROM CBP28P42MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

CBP28P42MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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