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CBP28L45MJ

Texas Instruments

CBP28L45MJ by Texas Instruments

The Texas Instruments CBP28L45MJ is a MIL-STD-883 Class B OTP ROM with 512x8 organization and 4096-bit memory density. It operates at temperatures ranging from -55 to 125°C, making it suitable for military-grade applications requiring fast access times of 60 ns. The package style is in-line with a rectangular shape and through-hole terminals, ideal for rugged environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,034 parts In-Stock

1+ parts

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7,034

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Digiode

USA . 701 parts In-Stock

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701

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,838 parts In-Stock

1+ parts

$4.154

100+ parts

-

1k+ parts

$4.598

10k+ parts

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1,838

$4.154

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$4.598

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DigiPath Technology Company

USA . 407 parts In-Stock

1+ parts

$4.574

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407

$4.574

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ChromeModa Solutions

Germany . 2,277 parts In-Stock

1+ parts

$4.667

100+ parts

$3.827

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2,277

$4.667

$3.827

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IDEA Electronic Components Group

UK . 60 parts In-Stock

1+ parts

$4.667

100+ parts

-

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$4.200

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60

$4.667

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$4.200

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AZTECH Wire

Italy . 532 parts In-Stock

1+ parts

$6.029

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532

$6.029

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Native Components

USA . 377 parts In-Stock

1+ parts

$7.431

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377

$7.431

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One Stop Electronics

USA . 997 parts In-Stock

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$17.000

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997

$17.000

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Corphita

USA . 1,712 parts In-Stock

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Northwest PG Solutions

USA . 1,285 parts In-Stock

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$7.283

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1,285

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$7.283

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Overview

Experience the unparalleled quality and reliability of Texas Instruments with the CBP28L45MJ OTP ROM. This military-grade memory IC offers exceptional performance and durability, making it ideal for a wide range of applications. Whether you're working on aerospace, defense, or industrial projects, this OTP ROM delivers the value and benefits you need to succeed. Trust in Texas Instruments to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides high durability and resistance to heat, making this OTP ROM reliable in harsh operating conditions.

Screening Level: MIL-STD-883 Class B (Modified)

Compliance with MIL-STD-883 Class B standards ensures high quality and reliability in military and aerospace applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient PCB layout and space-saving design.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes integration easier and compatible with most systems.

Organization: 512X8

Organized in a 512x8 configuration provides ample storage capacity and data organization for various applications.

Technology: TTL

Using TTL technology ensures fast and reliable data transfer within the OTP ROM.

Terminal Form: THROUGH-HOLE

Through-hole terminals enable secure and stable connection to the PCB, preventing issues with vibration or mechanical stress.

Memory Density: 4096 bit

High memory density of 4096 bits allows for storing a large amount of data in a compact form factor.

Memory IC Type: OTP ROM

Being a One-Time Programmable Read-Only Memory provides secure and permanent data storage without the risk of accidental erasure or modification.

Maximum Access Time: 60 ns

Fast access time of 60 nanoseconds ensures quick retrieval of data for efficient operation of the OTP ROM.

Technical Specifications

OTP ROM CBP28L45MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

CBP28L45MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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