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CBP24S10MJ

Texas Instruments

CBP24S10MJ by Texas Instruments

The Texas Instruments CBP24S10MJ is a MIL-STD-883 Class B OTP ROM with 256x4 organization, 1024-bit memory density, and 75ns max access time. Ideal for military applications requiring reliable data storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,372 parts In-Stock

1+ parts

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6,372

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Digiode

USA . 3,828 parts In-Stock

1+ parts

-

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3,828

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LWI Electronics Inc

India . 1 parts In-Stock

1+ parts

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 719 parts In-Stock

1+ parts

$0.526

100+ parts

-

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719

$0.526

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Northwest PG Solutions

USA . 1,073 parts In-Stock

1+ parts

$0.579

100+ parts

-

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1,073

$0.579

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Parana Technologies

USA . 1,131 parts In-Stock

1+ parts

$2.493

100+ parts

$231.503

1k+ parts

$2.244

10k+ parts

-

1,131

$2.493

$231.503

$2.244

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DigiPath Technology Company

USA . 1,962 parts In-Stock

1+ parts

$2.745

100+ parts

-

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10k+ parts

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1,962

$2.745

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ChromeModa Solutions

Germany . 6,876 parts In-Stock

1+ parts

$2.801

100+ parts

$2.297

1k+ parts

-

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6,876

$2.801

$2.297

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IDEA Electronic Components Group

UK . 596 parts In-Stock

1+ parts

$2.801

100+ parts

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$2.521

10k+ parts

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596

$2.801

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$2.521

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AZTECH Wire

Italy . 320 parts In-Stock

1+ parts

$19.198

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320

$19.198

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One Stop Electronics

USA . 1,629 parts In-Stock

1+ parts

$24.000

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1,629

$24.000

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Corphita

USA . 4,077 parts In-Stock

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4,077

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Overview

Enhance your electronic designs with the CBP24S10MJ by Texas Instruments, a top-tier manufacturer known for superior quality and reliability. This OTP ROM device offers unmatched performance in military-grade applications, ensuring optimal functionality even in harsh environments. With a high memory density of 1024 bits and fast access time of 75 ns, this product is ideal for a wide range of defense and aerospace projects. Trust Texas Instruments to deliver cutting-edge technology that meets your exacting requirements, providing value, efficiency, and peace of mind for your critical applications.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent heat dissipation and reliability, making this product suitable for harsh operating environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage allows for compatibility with a wide range of systems and applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this OTP ROM can withstand extended periods of use without performance degradation.

Technology: TTL

Utilizing TTL technology ensures fast and reliable data transfer, making this OTP ROM ideal for time-sensitive applications.

Memory Density: 1024 bit

With a high memory density, this OTP ROM can store a large amount of data in a compact package.

Technical Specifications

OTP ROM CBP24S10MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T16

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

16

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256X4

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Maximum Supply Current:

100 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

CBP24S10MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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