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TBP18S46JP4

Texas Instruments

TBP18S46JP4 by Texas Instruments

The Texas Instruments TBP18S46JP4 is a 512x8 OTP ROM with 4096-bit memory density and 75ns max access time. It operates at a nominal voltage of 5V, making it suitable for commercial-grade applications requiring reliable non-volatile memory storage in a ceramic rectangular package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,666 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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7,666

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-

-

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Digiode

USA . 2,494 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,494

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,048 parts In-Stock

1+ parts

$4.543

100+ parts

-

1k+ parts

$4.989

10k+ parts

-

1,048

$4.543

-

$4.989

-

DigiPath Technology Company

USA . 802 parts In-Stock

1+ parts

$5.002

100+ parts

$4.602

1k+ parts

-

10k+ parts

-

802

$5.002

$4.602

-

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ChromeModa Solutions

Germany . 5,490 parts In-Stock

1+ parts

$5.104

100+ parts

$4.185

1k+ parts

-

10k+ parts

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5,490

$5.104

$4.185

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IDEA Electronic Components Group

UK . 1,173 parts In-Stock

1+ parts

$5.104

100+ parts

-

1k+ parts

$4.594

10k+ parts

-

1,173

$5.104

-

$4.594

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AZTECH Wire

Italy . 216 parts In-Stock

1+ parts

$8.781

100+ parts

-

1k+ parts

-

10k+ parts

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216

$8.781

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One Stop Electronics

USA . 356 parts In-Stock

1+ parts

$13.000

100+ parts

-

1k+ parts

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10k+ parts

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356

$13.000

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Corphita

USA . 1,220 parts In-Stock

1+ parts

-

100+ parts

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1,220

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Overview

Unlock endless possibilities with the TBP18S46JP4 by Texas Instruments, a high-quality OTP ROM that boasts top-tier performance and reliability. Manufactured by industry leader Texas Instruments, this product is designed to meet the demands of various applications, offering unparalleled value and benefits to customers. From its robust construction to its cutting-edge technology, the TBP18S46JP4 delivers exceptional performance, making it an essential component for any project requiring reliable memory storage solutions.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material offers high resistance to heat and is durable, making this product suitable for high temperature environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard nominal supply voltage of 5V, this product can be easily integrated into existing systems without the need for additional power adjustments.

No. of Words: 512 words

With a large capacity of 512 words, this OTP ROM can store a significant amount of data, making it ideal for applications requiring extensive memory storage.

Memory Density: 4096 bit

The high memory density of 4096 bits allows for efficient storage and retrieval of data, making this OTP ROM a reliable choice for memory-intensive tasks.

Maximum Access Time: 75 ns

With a fast maximum access time of 75 nanoseconds, this OTP ROM ensures quick data retrieval and processing, improving overall system performance.

Technical Specifications

OTP ROM TBP18S46JP4 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TBP18S46JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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